Surface production of negative hydrogen ions by hydrogen and cesium ion bombardment

1987 ◽  
Author(s):  
M. Seidl ◽  
W. E. Carr ◽  
J. L. Lopes ◽  
S. T. Melnychuk ◽  
G. S. Tompa
Keyword(s):  
Ion Bombardment ◽  
Hydrogen Ions ◽  
Cesium Ion ◽  
Surface Production

The role of cesium‐ion bombardment in the formation of negative hydrogen ions on a converter surface

1987 ◽  
Vol 61 (11) ◽  
pp. 5000-5011 ◽  
Author(s):  
C. F. A. van Os ◽  
E. H. A. Granneman ◽  
P. W. van Amersfoort
Keyword(s):  
Ion Bombardment ◽  
Hydrogen Ions ◽  
Cesium Ion

Surface production of negative hydrogen ions

1992 ◽  
Author(s):  
M. Seidl ◽  
H. L. Cui ◽  
J. D. Isenberg ◽  
H. J. Kwon ◽  
B. S. Lee
Keyword(s):  
Hydrogen Ions ◽  
Surface Production

Surface Production Of Negative Hydrogen Ions

1989 ◽  
Author(s):  
M. Seidl ◽  
W. E. Carr ◽  
S. T. Melnychuk ◽  
A. E. Souzis ◽  
J. Isenberg ◽  
...  
Keyword(s):  
Hydrogen Ions ◽  
Surface Production

Catalytic oxidation of silicon by cesium ion bombardment

1991 ◽  
Vol 69 (1) ◽  
pp. 452-458 ◽  
Author(s):  
A. E. Souzis ◽  
H. Huang ◽  
W. E. Carr ◽  
M. Seidl
Keyword(s):  
Catalytic Oxidation ◽  
Ion Bombardment ◽  
Cesium Ion

Structures of Gas Phase Oligomeric Gold-Oxygen-Hydrogen Negative Ions Formed by Cesium Ion Bombardment of Vapor-Deposited Gold Surfaces

1995 ◽  
Vol 34 (1) ◽  
pp. 247-253 ◽  
Author(s):  
Gerard Bolbach ◽  
Dennis E. Main ◽  
Kenneth G. Standing ◽  
John B. Westmore
Keyword(s):  
Gas Phase ◽  
Negative Ions ◽  
Ion Bombardment ◽  
Gold Surfaces ◽  
Cesium Ion

Interaction of Atonic Hydrogen with Ion Bombardment Induced Defects at Si/SiO2 Interfaces

1992 ◽  
Vol 284 ◽  
Author(s):  
S. Kar ◽  
S. Ashok
Keyword(s):  
Metal Oxide ◽  
Ion Bombardment ◽  
Interfacial Region ◽  
Hydrogen Ions ◽  
Electrical Measurements ◽  
Metal Oxide Silicon ◽  
Induced Defects ◽  
Mos Structures

ABSTRACTElectrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

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