Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization

1997 ◽  
Vol 81 (8) ◽  
pp. 3670-3676 ◽  
Author(s):  
Kow-Ming Chang ◽  
Ta-Hsun Yeh ◽  
I-Chung Deng
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Fine Grain ◽  
Tungsten Film ◽  
Chemical Vapor Deposited ◽  
Aluminum Metallization

ZrN Diffusion Barrier in Aluminum Metallization Schemes

1982 ◽  
Vol 18 ◽  
Author(s):  
L. Krusin-Elbaum ◽  
M. Wittmer ◽  
C.-Y. Ting ◽  
J. J. Cuomo
Keyword(s):  
Grain Size ◽  
Diffusion Barrier ◽  
Annealing Temperature ◽  
Barrier Properties ◽  
Metal Nitrides ◽  
X Ray ◽  
Annealing Temperatures ◽  
Fine Grain ◽  
Transmission Electron ◽  
Aluminum Metallization

We have studied reactively sputtered ZrN, the most thermally stable of the refractory metal nitrides, for its diffusion barrier properties in aluminum metallization schemes with Rutherford backscattering spectroscopy and transmission electron microscopy (TEM). We find this compound to be very effective against aluminum diffusion up to 500 °C, independently of substrate temperature during sputtering. The useful temperature range can be extended by 50 °C with proper preannealing prior to aluminum deposition. The TEM study of the ZrN grain size as a function of annealing temperature revealed that the grain size does not change significantly upon annealing and that the grains are relatively small even at the highest annealing temperatures (about 300 Å at 900 °C). In addition, for annealing temperatures of and below 500 °C large portions of ZrN films were found to be of either amorphous or extremely fine–grain material, thus inhibiting the diffusion along grain boundaries. The presence of Zr3Al4Si5 ternary compound in samples annealed at 600 °C, as determined by X-ray analysis, may suggest that the ZrN barrier fails by decomposition of the film by aluminum.

Consecutive Selective Chemical Vapor Deposition of Copper and Aluminum from Organometallic Precursors

1992 ◽  
Vol 282 ◽  
Author(s):  
Stephen M. Fine ◽  
Paul N. Dyer ◽  
John A. T. Norman
Keyword(s):  
Chemical Vapor Deposition ◽  
Diffusion Barrier ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Rapid Thermal Anneal ◽  
Aluminum Metallization ◽  
Barrier Surface ◽  
Aluminum Deposition ◽  
Organometallic Precursors ◽  
Copper Aluminum

ABSTRACTFor the next generation of integrated microcircuits, there exists a need in the electronics industry for high conductivity, electromigration resistant metallization that can be deposited selectivity by chemical vapor deposition techniques. This paper describes a new process for depositing copper/aluminum metallization selectively onto diffusion barrier surfaces in two consecutive steps. First copper is selectively deposited by OMCVD ontoa patterned diffusion barrier surface using a Cu(I)(hfac)(olefin) precursor. Selective copper deposition onto tungsten or titanium nitride is achieved at 150°C and 100 mtorr. Aluminum is then selectively deposited onto copper using trimethylaminealane as the OMCVDprecursor. Trimethylaminealane gives good selectivity for aluminum deposition onto coppersurfaces over a temperature range of 100–120°C without the use of a surface activating agent. A small amount of copper diffuses into the as deposited aluminum layer atthe low deposition temperature. Complete diffusion of copper into aluminum is achieved by a rapid thermal anneal at a higher temperature. The selectivity of aluminum deposition onto copper surfaces is far superior to that observed for aluminum deposition onto other metal surfaces.

Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

1999 ◽  
Vol 146 (8) ◽  
pp. 3092-3096 ◽  
Author(s):  
Kow‐Ming Chang ◽  
I‐Chung Deng ◽  
Hong‐Yi Lin
Keyword(s):  
Chemical Vapor ◽  
Tungsten Film ◽  
Chemical Vapor Deposited

Thermal Stability of Amorphous-like WNx/W Bilayered Diffusion Barrier for Chemical Vapor Deposited-Tungsten/p+-Si Contact System

1999 ◽  
Vol 38 (Part 1, No. 3A) ◽  
pp. 1343-1351 ◽  
Author(s):  
Kow-Ming Chang ◽  
I-Chung Deng ◽  
Ta-Hsun Yeh ◽  
Kuen-Der Lain ◽  
Chao-Ming Fu
Keyword(s):  
Thermal Stability ◽  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Contact System ◽  
Chemical Vapor Deposited ◽  
Thermal Stability Of

Comparison of the diffusion barrier properties of chemical‐vapor‐deposited TaN and sputtered TaN between Cu and Si

1996 ◽  
Vol 79 (9) ◽  
pp. 6932-6938 ◽  
Author(s):  
M. H. Tsai ◽  
S. C. Sun ◽  
C. E. Tsai ◽  
S. H. Chuang ◽  
H. T. Chiu
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Chemical Vapor Deposited

Diffusion Barrier Properties of Metallorganic Chemical Vapor Deposited Tantalum Nitride Films Against Cu Metallization

1999 ◽  
Vol 146 (10) ◽  
pp. 3724-3730 ◽  
Author(s):  
Sung‐Lae Cho ◽  
Ki‐Bum Kim ◽  
Seok‐Hong Min ◽  
Hyun‐Kook Shin ◽  
Sam‐Dong Kimd
Keyword(s):  
Diffusion Barrier ◽  
Chemical Vapor ◽  
Barrier Properties ◽  
Tantalum Nitride ◽  
Cu Metallization ◽  
Chemical Vapor Deposited
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