Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

Kow‐Ming Chang; I‐Chung Deng; Hong‐Yi Lin

doi:10.1149/1.1392435

Suppression of Fluorine Penetration by Use of In Situ Stacked Chemical Vapor Deposited Tungsten Film

Journal of The Electrochemical Society ◽

10.1149/1.1392435 ◽

1999 ◽

Vol 146 (8) ◽

pp. 3092-3096 ◽

Cited By ~ 8

Author(s):

Kow‐Ming Chang ◽

I‐Chung Deng ◽

Hong‐Yi Lin

Keyword(s):

Chemical Vapor ◽

Tungsten Film ◽

Chemical Vapor Deposited

Download Full-text

The Characteristics of Nitrogen Implanted Tungsten Film as a New Diffusion Barrier for Metal Organic Chemical Vapor Deposited Cu Metallization

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.6857 ◽

1995 ◽

Vol 34 (Part 1, No. 12B) ◽

pp. 6857-6860 ◽

Cited By ~ 1

Author(s):

Chul Soon Kwon ◽

Yong Tae Kim ◽

Suk-Ki Min ◽

In Hoon Choi

Keyword(s):

Diffusion Barrier ◽

Chemical Vapor ◽

Organic Chemical ◽

Cu Metallization ◽

Tungsten Film ◽

Chemical Vapor Deposited ◽

Metal Organic

Download Full-text

Highly reliable chemical vapor deposited stacked oxynitride gate dielectrics fabricated by in situ rapid thermal multiprocessing

Applied Physics Letters ◽

10.1063/1.116275 ◽

1996 ◽

Vol 68 (19) ◽

pp. 2666-2668 ◽

Cited By ~ 4

Author(s):

J. Yan ◽

L. K. Han ◽

D. L. Kwong

Keyword(s):

Gate Dielectrics ◽

Chemical Vapor ◽

Chemical Vapor Deposited

Download Full-text

Effect of Temperature on the Microstructure of Boron Nitride Formed In Situ on Chemical Vapor-Deposited Boron in Ammonia Gas

Journal of the American Ceramic Society ◽

10.1111/j.1551-2916.2010.04386.x ◽

2011 ◽

Vol 94 (3) ◽

pp. 679-682 ◽

Cited By ~ 5

Author(s):

Siwei Li ◽

Litong Zhang ◽

Fang Ye ◽

Yongsheng Liu ◽

Laifei Cheng ◽

...

Keyword(s):

Boron Nitride ◽

Chemical Vapor ◽

Effect Of Temperature ◽

Ammonia Gas ◽

Chemical Vapor Deposited

Download Full-text

The Effect of in situ Ultraviolet Irradiation on the Chemical Vapor Deposited ZnO Thin Films

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2016.29.4.241 ◽

2016 ◽

Vol 29 (4) ◽

pp. 241-246

Author(s):

Bo-Seok Kim ◽

Seung Jae Baik

Keyword(s):

Thin Films ◽

Ultraviolet Irradiation ◽

Chemical Vapor ◽

Zno Thin Films ◽

Chemical Vapor Deposited

Download Full-text

Shallow junction formation by phosphorus diffusion from in situ spike-doped chemical vapor deposited amorphous silicon

Microelectronic Engineering ◽

10.1016/0167-9317(94)00166-r ◽

1995 ◽

Vol 26 (2) ◽

pp. 119-129

Author(s):

D. Krüger ◽

J. Schlote ◽

W. Röpke ◽

R. Kurps ◽

Ch. Quick

Keyword(s):

Amorphous Silicon ◽

Chemical Vapor ◽

Phosphorus Diffusion ◽

Shallow Junction ◽

Chemical Vapor Deposited ◽

Junction Formation

Download Full-text

In situ control of Au-catalyzed chemical vapor deposited (CVD) Ge nanocone morphology by growth temperature variation

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2010.05.035 ◽

2010 ◽

Vol 312 (16-17) ◽

pp. 2494-2497 ◽

Cited By ~ 8

Author(s):

Hans S. Cho ◽

Theodore I. Kamins

Keyword(s):

Temperature Variation ◽

Growth Temperature ◽

Chemical Vapor ◽

Chemical Vapor Deposited ◽

In Situ Control

Download Full-text

Trion-Inhibited Strong Excitonic Emission and Broadband Giant Photoresponsivity from Chemical Vapor-Deposited Monolayer MoS2Grown in Situ on TiO2Nanostructure

ACS Applied Materials & Interfaces ◽

10.1021/acsami.8b14092 ◽

2018 ◽

Vol 10 (49) ◽

pp. 42812-42825 ◽

Cited By ~ 13

Author(s):

Kamal Kumar Paul ◽

Larionette P. L. Mawlong ◽

P. K. Giri

Keyword(s):

Chemical Vapor ◽

Chemical Vapor Deposited ◽

Excitonic Emission

Download Full-text

The growth and in situ characterization of chemical vapor deposited SiO2

Journal of Crystal Growth ◽

10.1016/0022-0248(87)90020-0 ◽

1987 ◽

Vol 83 (2) ◽

pp. 290-296 ◽

Cited By ~ 3

Author(s):

R. Iyer ◽

R.R. Chang ◽

D.L. Lile

Keyword(s):

Chemical Vapor ◽

In Situ Characterization ◽

Chemical Vapor Deposited

Download Full-text

Barrier Characteristics of Chemical Vapor Deposited Amorphous‐like Tungsten Silicide with In Situ Nitrogen Plasma Treatment

Journal of The Electrochemical Society ◽

10.1149/1.1391967 ◽

1999 ◽

Vol 146 (7) ◽

pp. 2533-2539

Author(s):

Kow‐Ming Chang ◽

I‐Chung Deng ◽

Ta‐Hsun Yeh ◽

Chien‐Wen Shih

Keyword(s):

Plasma Treatment ◽

Chemical Vapor ◽

Nitrogen Plasma ◽

Tungsten Silicide ◽

Chemical Vapor Deposited

Download Full-text

Suppression of Fluorine Impurity in Blanket Chemical Vapor Deposited Tungsten Film for Via Fills with A Novel Two-step Deposition Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.36.2061 ◽

1997 ◽

Vol 36 (Part 1, No. 4A) ◽

pp. 2061-2067 ◽

Cited By ~ 1

Author(s):

Kow-Ming Chang ◽

Ta-Hsun Yeh ◽

Kuen-Der Lain ◽

Chao-Ming Fu

Keyword(s):

Chemical Vapor ◽

Deposition Technique ◽

Tungsten Film ◽

Chemical Vapor Deposited

Download Full-text