Optical and electrical properties of amorphous silicon films prepared by photochemical vapor deposition

1983 ◽  
Vol 42 (8) ◽  
pp. 678-679 ◽  
Author(s):  
T. Saitoh ◽  
S. Muramatsu ◽  
T. Shimada ◽  
M. Migitaka
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Films ◽  
Optical And Electrical Properties ◽  
Photochemical Vapor Deposition

Structural, Optical, and Electrical Properties of Amorphous Silicon Films

1970 ◽  
Vol 1 (6) ◽  
pp. 2632-2641 ◽  
Author(s):  
M. H. Brodsky ◽  
R. S. Title ◽  
K. Weiser ◽  
G. D. Pettit
Keyword(s):  
Electrical Properties ◽  
Amorphous Silicon ◽  
Silicon Films ◽  
Optical And Electrical Properties

Reduction of Si-H2 Bond Content in Hydrogenated Amorphous Silicon Prepared by Mercury-Sensitized Photochemical Vapor Deposition

1990 ◽  
Vol 192 ◽  
Author(s):  
N. Sakuma ◽  
H. Nozaki ◽  
T. Niiyama ◽  
H. Ito
Keyword(s):  
Light Intensity ◽  
Amorphous Silicon ◽  
Hydrogen Content ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
The Other ◽  
Photochemical Vapor Deposition ◽  
Hydrogenated Amorphous ◽  
Deposition Conditions

ABSTRACTThe ratio of Si-H2 bonds to hydrogen content in hydrogenated amorphous silicon films, prepared by mercury-sensitized photochemical vapor deposition, depends on the deposition conditions, in particular on the distance between the substrate and the light-transparent window.The ratio is reduced from 20 % to 8 % by decreasing the distance from 30 mm to 8 mm. On the other hand, the hydrogen content remains constant at 15 at.%. Decreasing the distance has been found to be almost equivalent to increasing the light intensity, especially 254 nm-light intensity.

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