Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film

1997 ◽  
Vol 81 (11) ◽  
pp. 7175-7180 ◽  
Author(s):  
S. B. Herner ◽  
V. Krishnamoorthy ◽  
K. S. Jones ◽  
T. K. Mogi ◽  
M. O. Thompson ◽  
...  
1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.


1994 ◽  
Vol 3 (9) ◽  
pp. 682-689 ◽  
Author(s):  
Chen Jun-fang ◽  
Cheng Shao-yu ◽  
Ren Zhao-xing ◽  
Zhang Su-qing ◽  
Ning Zhao-yuan ◽  
...  

1971 ◽  
Vol 10 (12) ◽  
pp. 1675-1679 ◽  
Author(s):  
Hiroshi Ogawa ◽  
Tatau Nishinaga ◽  
Masanobu Kasuga ◽  
Tetsuya Arizumi

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