Cl2 plasma etching of Si(100): Nature of the chlorinated surface layer studied by angle-resolved x-ray photoelectron spectroscopy

1997 ◽  
Vol 81 (10) ◽  
pp. 6738-6748 ◽  
Author(s):  
N. Layadi ◽  
V. M. Donnelly ◽  
J. T. C. Lee
Keyword(s):  
Surface Layer ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
X Ray

Cl2 Plasma Etching of Si(100): Surface Chemistry and Damage

1996 ◽  
Vol 448 ◽  
Author(s):  
N. Layadi ◽  
V. M. Donnelly ◽  
J. T. C. Lee
Keyword(s):  
Surface Layer ◽  
Surface Chemistry ◽  
Real Time ◽  
Plasma Etching ◽  
Spectroscopic Ellipsometry ◽  
Photoelectron Spectroscopy ◽  
Equivalent Thickness ◽  
Ion Energy ◽  
X Ray

AbstractThe interaction of a Cl2 plasma with a Si(100) surface has been investigated by angle resolved x-ray photoelectron spectroscopy (XPS) and spectroscopic ellipsometry. From XPS, it was found that the amount of chlorine incorporated at the Si surface increases with ion energy. Chlorine is present as SiClx (x = 1-3) with average relative coverages (integrated over depth) of [SiCl]:[SiCl2]:[SiCl3] ≅ 1:0.33:0.1. These relative coverages don’t depend strongly on ion energy between 40 and 280 eV. Real-time spectroscopic ellipsometry measurements showed that the layer present during etching is stable when the plasma is extinguished and the gas pumped away. In addition, the equivalent thickness of damaged silicon and silicon-chloride within the surface layer increases with ion energy.

scholarly journals Structural and Fluorine Plasma Etching Behavior of Sputter-Deposition Yttrium Fluoride Film

Nanomaterials ◽  
2018 ◽  
Vol 8 (11) ◽  
pp. 936 ◽  
Author(s):  
Wei-Kai Wang ◽  
Yu-Xiu Lin ◽  
Yi-Jie Xu
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Heating Temperature ◽  
Working Pressure ◽  
Etching Depth ◽  
Yttrium Fluoride ◽  
X Ray ◽  
Substrate Heating ◽  
Etching Behavior ◽  
Etched Surface

Yttrium fluoride (YF3) films were grown on sapphire substrate by a radio frequency magnetron using a commercial ceramic target in a vacuum chamber. The structure, composition, and plasma etching behavior of the films were systematically investigated. The YF3 film was deposited at a working pressure of 5 mTorr and an RF power of 150 W. The substrate-heating temperature was increased from 400 to 700 °C in increments of 100 °C. High-resolution transmission electron microscopy (HRTEM) and X-ray diffraction results confirmed an orthorhombic YF3 structure was obtained at a substrate temperature of 700 °C for 2 h. X-ray photoelectron spectroscopy revealed a strongly fluorinated bond (Y–F bond) on the etched surface of the YF3 films. HRTEM analysis also revealed that the YF3 films became yttrium-oxyfluorinated after exposure to fluorocarbon plasma. The etching depth was three times lower on YF3 film than on Al2O3 plate. These results showed that the YF3 films have excellent erosion resistance properties compared to Al2O3 plates.

Segregation of Cu on Etched and Non-Etched Al(Cu) Surface

1998 ◽  
Vol 516 ◽  
Author(s):  
Hua Li ◽  
Karen Maex ◽  
Bert Brijs ◽  
Thierry Conard ◽  
Wilfried Vandervorst ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Native Oxide ◽  
Interface Area ◽  
X Ray ◽  
Origin And Evolution ◽  
Significant Enrichment ◽  
Segregation Phenomenon ◽  
Al Oxide

AbstractIn this paper, we have studied the segregation phenomenon of Cu on the surfaces of patterned lines, dry-etched films and non-etched films, by using X-ray photoelectron spectroscopy and lower energy Rutherford Backscattering Spectrometry. Significant enrichment of Cu is found on the sidewall of the lines. Annealing at 350°C and above cause the disappearance of this enrichment. Origin and evolution of this Cu enrichment have been investigated on films taken out from different steps of the etching process. It has been found that most of the Cu products induced by the plasma etching are CuCl and CuCl2 and they are removed mostly from the top Al oxide layer by the strip process. On the interface area between Al and the native oxide, considerable quantities of etched induced Cu are retained. This Cu is identified to be mainly metallic Cu. Different from the mechanism explained above, thermal annealing can also cause Cu segregation. We have found that Cu atoms diffuse into the native Al oxide where they form Cu2O.

scholarly journals The Corrosion Inhibition of AA6082 Aluminium Alloy by Certain Azoles in Chloride Solution: Electrochemistry and Surface Analysis

Coatings ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 380 ◽  
Author(s):  
Klodian Xhanari ◽  
Matjaž Finšgar
Keyword(s):  
Surface Layer ◽  
Aluminium Alloy ◽  
Surface Analysis ◽  
Corrosion Inhibition ◽  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Attenuated Total Reflectance ◽  
X Ray ◽  
Inhibition Effect ◽  
Secondary Ion

The corrosion inhibition effect of five azole compounds on the corrosion of an AA6082 aluminium alloy in 5 wt.% NaCl solution at 25 and 50 °C was investigated using weight loss and electrochemical measurements. Only 2-mercaptobenzothiazole (MBT) showed a corrosion inhibition effect at both temperatures and was further studied in detail, including with the addition of potassium iodide as a possible intensifier. Surface analysis of the MBT surface layer was performed by means of attenuated total reflectance Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, and time-of-flight secondary ion mass spectrometry techniques. The hydrophobicity of the MBT surface layer was also investigated.

Corrosion Phenomena on the Grain Boundary of AlCu FIlms After Plasma Etching

1997 ◽  
Vol 473 ◽  
Author(s):  
C. L. Kim ◽  
K. H. Kwon ◽  
S. J. Yu ◽  
H. J. Kim ◽  
E. G. Chang
Keyword(s):  
Grain Boundary ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray ◽  
Gas Plasma ◽  
Point Analysis ◽  
Selective Corrosion ◽  
Scanning Electron

ABSTRACTThe effect of grain boundary on the corrosion of Al(Cu 1%) etched using SiCl4/Cl2/He/CHF3 gas plasma has been evaluated with XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscopy) and AES (Auger electron spectroscopy). It was found with SEM that the surface of Al(Cu 1 %) mainly corroded at the grain boundary. Using AES point analysis, the cause of selective corrosion at the grain boundary of Al(Cu 1 %) has been investigated. The results of AES indicated that the contents of F and Cl have made a difference at the analyzed positions. This seems to result from the imperfect crystalline structure of Al(Cu 1%) grain boundary. It was also confirmed that F has passivated the Cl at the grain boundary. The SEM and XPS results implied that Cl incorporated in the grain boundary of polycrystalline Al(Cu 1%) film accelerated the corrosion and could not be easily removed by the subsequent SF6 plasma treatment.

Correlations Between the Cu‐O Bonding States and the Superconductivity ‐ an Xps Investigation

1989 ◽  
Vol 169 ◽  
Author(s):  
S.C. Han ◽  
D.Z. Liu ◽  
X.M. Xie ◽  
Z.L. Wu ◽  
G.C. Huth
Keyword(s):  
Surface Layer ◽  
Shape Analysis ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Final States ◽  
Bulk Materials ◽  
X Ray ◽  
Line Shape Analysis ◽  
Inner Region

AbstractAuger electron spectroscopy (AES) and core‐level x‐ray photoelectron spectroscopy (XPS) have been used to study the compositional and electronic‐state variations from the contaminated surface layer to the inner region of YBa2Cu3Ox and Bi2(Sr,Ca)n+1Cun02n+4 compounds. The results showed that the carbon‐rich contamination layer in BSCCO is thin and easier to be removed by Ar+ sputtering, indicating a much more stable surface than that of YBCO. This layer is oxygen deficient and contains higher Cu2+ satellites ( 2p3d9 final states) than in the bulk materials. Line‐shape analysis suggests three‐Gaussian features for both Cu 2p3/2 and O Is lines. The 529 eV signal is observed in both YBCO and BSCCO O Is spectra.

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