Corrosion Phenomena on the Grain Boundary of AlCu FIlms After Plasma Etching

1997 ◽  
Vol 473 ◽  
Author(s):  
C. L. Kim ◽  
K. H. Kwon ◽  
S. J. Yu ◽  
H. J. Kim ◽  
E. G. Chang
Keyword(s):  
Grain Boundary ◽  
Plasma Etching ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
X Ray ◽  
Gas Plasma ◽  
Point Analysis ◽  
Selective Corrosion ◽  
Scanning Electron

ABSTRACTThe effect of grain boundary on the corrosion of Al(Cu 1%) etched using SiCl4/Cl2/He/CHF3 gas plasma has been evaluated with XPS (X-ray photoelectron spectroscopy), SEM (scanning electron microscopy) and AES (Auger electron spectroscopy). It was found with SEM that the surface of Al(Cu 1 %) mainly corroded at the grain boundary. Using AES point analysis, the cause of selective corrosion at the grain boundary of Al(Cu 1 %) has been investigated. The results of AES indicated that the contents of F and Cl have made a difference at the analyzed positions. This seems to result from the imperfect crystalline structure of Al(Cu 1%) grain boundary. It was also confirmed that F has passivated the Cl at the grain boundary. The SEM and XPS results implied that Cl incorporated in the grain boundary of polycrystalline Al(Cu 1%) film accelerated the corrosion and could not be easily removed by the subsequent SF6 plasma treatment.

Sol-Gel AL2O3 Coatings on SiC Fiber

1991 ◽  
Vol 249 ◽  
Author(s):  
Youming Xiao ◽  
Beng Jit Tan ◽  
Steven L. Suib ◽  
Francis S. Galasso
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sic Fiber ◽  
Sol Gel Process ◽  
Scanning Electron

ABSTRACTCoating of SiC (BP-SIGMA) fibers with alumina by a sol-gel process did not cause degradation even after heating to 1000°C in air for 24 h. X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), Auger electron spectroscopy (AES) and scanning electron microscopy (SEM ) methods were used to study the coating fiber interface.

Chromium implantation in silica glass

1996 ◽  
Vol 11 (1) ◽  
pp. 229-235 ◽  
Author(s):  
E. Cattaruzza ◽  
R. Bertoncello ◽  
F. Trivillin ◽  
P. Mazzoldi ◽  
G. Battaglin ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Photoelectron Spectroscopy ◽  
Silica Glass ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Secondary Ion Mass Spectrometry ◽  
Rutherford Backscattering Spectrometry ◽  
X Ray ◽  
Chromium Silicide ◽  
Secondary Ion

Silica glass was implanted with chromium at the energy of 35 and 160 keV and at fluences varying from 1 × 1016 to 11 × 1016 ions cm−2. In a set of chromium-implanted samples significant amounts of carbon were detected. Samples were characterized by x-ray photoelectron spectroscopy, x-ray-excited Auger electron spectroscopy, secondary ion mass spectrometry, and Rutherford backscattering spectrometry. Chromium silicide and chromium oxide compounds were observed; the presence of carbon in the implanted layers induces the further formation of chromium carbide species. Thermodynamic considerations applied to the investigated systems supply indications in agreement with the experimental evidences.

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