The light-induced effect of a-Si films and solar cells fabricated by the super chamber

1987 ◽  
Author(s):  
Y. Kuwano ◽  
S. Tsuda ◽  
N. Nakamura ◽  
M. Nishikuni ◽  
K. Yoshida ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Films

scholarly journals Toward Cost-Effective Manufacturing of Silicon Solar Cells: Electrodeposition of High-Quality Si Films in a CaCl2-based Molten Salt

2017 ◽  
Vol 56 (47) ◽  
pp. 15078-15082 ◽  
Author(s):  
Xiao Yang ◽  
Li Ji ◽  
Xingli Zou ◽  
Taeho Lim ◽  
Ji Zhao ◽  
...  
Keyword(s):  
Solar Cells ◽  
Molten Salt ◽  
Cost Effective ◽  
Silicon Solar Cells ◽  
High Quality ◽  
Si Films

Luminescence from poly-Si films and its application to study passivating-contact solar cells

2019 ◽  
Author(s):  
H. T. Nguyen ◽  
L. Li ◽  
F. Kremer ◽  
A. Cuevas ◽  
D. Macdonald ◽  
...  
Keyword(s):  
Solar Cells ◽  
Si Films

scholarly journals Fabrication of Large-Grain Thick Polycrystalline Silicon Thin Films via Aluminum-Induced Crystallization for Application in Solar Cells

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
Hsiao-Yeh Chu ◽  
Min-Hang Weng ◽  
Chen Lin
Keyword(s):  
Solar Cells ◽  
Polycrystalline Silicon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Second Stage ◽  
Silicon Thin Films ◽  
Si Films ◽  
Two Stages ◽  
Induced Crystallization ◽  
Aluminum Induced Crystallization

The fabrication of large-grain 1.25 μm thick polycrystalline silicon (poly-Si) films via two-stage aluminum-induced crystallization (AIC) for application in thin-film solar cells is reported. The induced 250 nm thick poly-Si film in the first stage is used as the seed layer for the crystallization of a 1 μm thick amorphous silicon (a-Si) film in the second stage. The annealing temperatures in the two stages are both 500°C. The effect of annealing time (15, 30, 60, and 120 minutes) in the second stage on the crystallization of a-Si film is investigated using X-ray diffraction (XRD), scanning electron microscopy, and Raman spectroscopy. XRD and Raman results confirm that the induced poly-Si films are induced by the proposed process.

Fabrication of Composite Nanoporous Si Films with Gold Nanoparticles to Enhance the Efficiency of Silicon Solar Cells

2019 ◽  
Vol 41 (45) ◽  
pp. 1-11
Author(s):  
Hironori Hachimura ◽  
Kwanwoo Nam ◽  
Yuki Tanaka ◽  
Manabu Ihara
Keyword(s):  
Gold Nanoparticles ◽  
Solar Cells ◽  
Silicon Solar Cells ◽  
Nanoporous Si ◽  
Si Films

Microcrystalline Silicon for Solar Cells at High Deposition Rates by Hot Wire Cvd

2002 ◽  
Vol 715 ◽  
Author(s):  
R. E. I. Schropp ◽  
Y. Xu ◽  
E. Iwaniczko ◽  
G. A. Zaharias ◽  
A. H. Mahan
Keyword(s):  
Solar Cells ◽  
Substrate Temperature ◽  
Volume Fraction ◽  
Silicon Layer ◽  
Hot Wire ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Deposition Rates ◽  
Deposition Parameters ◽  
Si Films

AbstractWe have explored which deposition parameters in Hot Wire CVD have the largest impact on the quality of microcrystalline silicon (μc-Si) made at deposition rates (Rd) < 10 Å/s for use in thin film solar cells. Among all parameters, the filament temperature (Tfil) appears to be crucial for making device quality films. Using two filaments and a filament-substrate spacing of 3.2 cm, μc-Si films, using seed layers, can be deposited at high Tfil (∼2000°C) with a crystalline volume fraction < 70-80 % at Rd's < 30 Å/s. Although the photoresponse of these layers is high (< 100), they appear not to be suitable for incorporation into solar cells, due to their porous nature. n-i-p cells fabricated on stainless steel with these i-layers suffer from large resistive effects or barriers, most likely due to the oxidation of interconnected pores in the silicon layer. The porosity is evident from FTIR measurements showing a large oxygen concentration at ∼1050 cm-1, and is correlated with the 2100 cm-1 signature of most of the Si-H stretching bonds. Using a Tfil of 1750°C, however, the films are more compact, as seen from the absence of the 2100 cm-1 SiH mode and the disappearance of the FTIR Si-O signal, while the high crystalline volume fraction (< 70-80 %) is maintained. Using this Tfil and a substrate temperature of 400°C, we obtain an efficiency of 4.9 % for cells with a Ag/ZnO back reflector, with an i-layer thickness of only ∼0.7 μm. High values for the quantum efficiency extend to very long wavelengths, with values of 33 % at 800 nm and 15 % at 900 nm, which are unequalled by a-SiGe:H alloys. Further, by varying the substrate temperature to enable deposition near the microcrystalline to amorphous transition (‘edge’) and incorporating variations in H2 dilution during deposition of the bulk, efficiencies of 6.0 % have been obtained. The Rd's of these i-layers are 8-10 Å/s, and are the highest to date obtained with HWCVD for microcrystalline layers used in cells with efficiencies of ∼6 %.

Plasma Deposition and Interface Control in Low Temperature Processing of Thin Film Solar Cells

1997 ◽  
Vol 485 ◽  
Author(s):  
B. Jagannathan ◽  
W. A. Anderson
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Carrier Transport ◽  
Crystalline Silicon ◽  
Plasma Deposition ◽  
Microcrystalline Silicon ◽  
Interface Control ◽  
Electro Optic ◽  
Low Temperature Processing ◽  
Si Films

AbstractPlasma deposition of thin silicon films with a variable microstructure and controlled interface formation techniques are being developed for thin film silicon/polycrystalline silicon solar cells. Low hydrogen content amorphous (a-Si) or microcrystalline silicon (μ c-Si) films were obtained by controlling the H2 dilution of 2% SiH4/He in a microwave ECR discharge. The films were characterized for structural and electro-optic properties. Junction creation for solar cells was investigated by depositing single or multilayers of the film silicon onto crystalline silicon (c-Si). Effort to improve carrier transport and photovoltaic (PV) properties was pursued through interface modifications effected by varying the microstructure of the layer in contact with the substrate. Cells with 7% conversion efficiency (No A/R) were obtained for an a-Si/c-Si heterojunction configuration. Improved carrier transport and PV properties (9% ef ficient) were achieved by inserting a thin μ c-Si layer in the above structure.

Thin film solar cells on glass based on the transfer of monocrystalline Si films

2001 ◽  
Vol 65 (1-4) ◽  
pp. 355-361 ◽  
Author(s):  
R.B Bergmann ◽  
T.J Rinke ◽  
T.A Wagner ◽  
J.H Werner
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Thin Film Solar Cells ◽  
Si Films
Sign in / Sign up

Export Citation Format

Share Document