A Study of Annealing Behavior of EL2 and EL6 Groups in SI-GaAs

1996 ◽  
Vol 421 ◽  
Author(s):  
Wu Fengmei ◽  
Zhao Zhouying
Keyword(s):  
Thermal Annealing ◽  
Conduction Band ◽  
Rapid Thermal Annealing ◽  
Deep Levels ◽  
Furnace Annealing ◽  
Annealing Behavior ◽  
Break Up ◽  
Transient Spectroscopy

AbstractWe present annealing behavior for EL2 and EL6 groups as dominant deep levels in semiinsulating GaAs using Photo Induced Transient Spectroscopy (PITS) measurement. During rapid thermal annealing, a relation has been identified between EL2 group at 0.79 and 0.82 eV and EL6 group at 0.24, 0.27 and 0.82 eV below the conduction band. It is found that they may be close in structure, and belong to the EL2 and EL6 groups, respectively. In rapidly annealed samples, the quantity of all defects in the EL2 group increases, while that in the EL6 group decreases. However, by furnace annealing at 950°C for 5 hours, some of the defects in the EL2 group break up, and the quantity of all defects in the EL6 group increases. It is suggested that the EL2 group and EL6 group are related in their microscopy structures. We then discuss a relation between the two groups and their origins.

Deep Level Investigation in Si-GaAs by Rapid Thermal Annealing

1997 ◽  
Vol 470 ◽  
Author(s):  
Zhao Zhouying ◽  
Wu Fengmai ◽  
Li Ningsheng
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level ◽  
Thermal Conversion ◽  
Deep Levels ◽  
Hall Measurement ◽  
Induced Current ◽  
Shallow Acceptor ◽  
Transient Spectroscopy

ABSTRACTDeep levels in undoped LEC semi-insulating (SI) GaAs have been investigated by rapid thermal annealing (RTA). The GaAs wafers were annealed for 10 sec in N2 atmosphere at temperatures ranging from 500 to 800 °C. Using photo-induced current transient spectroscopy (PITS) and Hall measurement, we have investigated the behavior of various deep levels as a function of RTA temperature and the phenomenon of thermal conversion. The change and even conversion in resistivity is related not only to decrease of the EL2 and EL6 defects, but also to shallow acceptor caused by arsenic-escaping in the surface of the wafer. Choosing proper RTA temperaturte will improve the electrical properties of SI-GaAs after RTA.

scholarly journals Deep levels in p+-n junctions fabricated by rapid thermal annealing of Mg or Mg/P implanted InP

1997 ◽  
Vol 81 (7) ◽  
pp. 3143-3150 ◽  
Author(s):  
L. Quintanilla ◽  
S. Dueñas ◽  
E. Castán ◽  
R. Pinacho ◽  
J. Barbolla ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

omparisons of Silicide Formation by Rapid Thermal Annealing and Conventional Furnace Annealing

1987 ◽  
Vol 92 ◽  
Author(s):  
E. Ma ◽  
M. Natan ◽  
B.S. Lim ◽  
M-A. Nicolet
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Silicide Formation ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
Cross Sectional ◽  
Conventional Furnace ◽  
Diffusion Controlled ◽  
Conventional Furnace Annealing ◽  
Kinetics Of

ABSTRACTSilicide formation induced by rapid thermal annealing (RTA) and conventional furnace annealing (CFA) in bilayers of sequentially deposited films of amorphous silicon and polycrystalline Co or Ni is studied with RBS, X-ray diffraction and TEM. Particular attention is paid to the reliability of the RTA temperature measurements in the study of the growth kinetics of the first interfacial compound, Co2Si and Ni2Si, for both RTA and CFA. It is found that the same diffusion-controlled kinetics applies for the silicide formation by RTA in argon and CFA in vacuum with a common activation energy of 2.1+0.2eV for Co2Si and 1.3+0.2eV for Ni Si. Co and Ni atoms are the dominant diffusing species; during silicide formation by both RTA and CFA. The microstructures of the Ni-silicide formed by the two annealing techniques, however, differs considerably from each other, as revealed by cross-sectional TEM studies.

Correlation Between Defect Characteristics and Layer Intermixing in Si Implanted GaAs/AIGaAs Superlattices

1989 ◽  
Vol 147 ◽  
Author(s):  
Samuel Chen ◽  
S.-Tong Lee ◽  
G. Braunstein ◽  
G. Rajeswaran ◽  
P. Fellinger
Keyword(s):  
Ion Implantation ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Peak Position ◽  
Compound Semiconductor ◽  
Subsequent Annealing ◽  
Semiconductor Superlattices ◽  
Furnace Annealing ◽  
Annealing Conditions ◽  
Induced Defects

AbstractDefects induced by ion implantation and subsequent annealing are found to either promote or suppress layer intermixing in Ill-V compound semiconductor superlattices (SLs). We have studied this intriguing relationship by examining how implantation and annealing conditions affect defect creation and their relevance to intermixing. Layer intermixing has been induced in SLs implanted with 220 keV Si+ at doses < 1 × 1014 ions/cm2 and annealed at 850°C for 3 hrs or 1050°C for 10 s. Upon furnace annealing, significant Si in-diffusion is observed over the entire intermixed region, but with rapid thermal annealing layer intermixing is accompanied by negligible Si movement. TEM showed that the totally intermixed layers are centered around a buried band of secondary defects and below the Si peak position. In the nearsurface region layer intermixing is suppressed and is only partially completed at ≤1 × 1015 Si/cm2. This inhibition is correlated to a loss of the mobile implantation-induced defects, which are responsible for intermixing.

Rapid Thermal Annealing of Neutron Transmutation Toped Czochralski Silicon

1992 ◽  
Vol 262 ◽  
Author(s):  
G. M. Berezina ◽  
F. P. Kdrshunov ◽  
N. A. Sobolev ◽  
A. V. Voevodova ◽  
A. A. Stuk
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Neutron Irradiation ◽  
Irradiation Temperature ◽  
Electrical Parameters ◽  
Furnace Annealing ◽  
Annealing Behaviour ◽  
Czochralski Silicon ◽  
Neutron Transmutation

ABSTRACTThe influence of the rapid thermal annealing (RTA) in comparison with that of the standard furnace annealing (FA) on the electrical parameters and photoluminescence (PL) of Czochralski silicon (Cz Si) subjected to neutron irradiation at various temperatures has been studied. The role of the irradiation temperature on the annealing behaviour of electrical parameters in Cz Si has been established. The possibility of getting neutron transmutation doped (NTD) Cz Si having the calculated resistivity by means of the RTA is shown.

Deep levels in undoped bulk InP after rapid thermal annealing

1990 ◽  
Vol 68 (4) ◽  
pp. 1665-1668 ◽  
Author(s):  
Eun Kyu Kim ◽  
Hoon Young Cho ◽  
Ju Hoon Yoon ◽  
Suk‐Ki Min ◽  
Young Lae Jung ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Levels

Deep-level transient spectroscopy studies of thermal donor annihilation in silicon by rapid thermal annealing

1989 ◽  
Vol 4 (2) ◽  
pp. 241-243 ◽  
Author(s):  
Yutaka Tokuda ◽  
Nobuji Kobayashi ◽  
Yajiro Inoue ◽  
Akira Usami ◽  
Makoto Imura
Keyword(s):  
Heat Treatment ◽  
Thermal Stress ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Electron Trap ◽  
Thermal Donor ◽  
Transient Spectroscopy ◽  
Spectroscopy Studies

The annihilation of thermal donors in silicon by rapid thermal annealing (RTA) has been studied with deep-level transient spectroscopy. The electron trap AO (Ec – 0.13 eV) observed after heat treatment at 450 °C for 10 h, which is identified with the thermal donor, disappears by RTA at 800 °C for 10 s. However, four electron traps, A1 (Ec 0.18 eV), A2 (Ec – 0.25 eV), A3 (Ec – 0.36 eV), and A4 (Ec – 0.52 eV), with the concentration of ∼1012 cm−3 are produced after annihilation of thermal donors by RTA. These traps are also observed in silicon which receives only RTA at 800 °C. This indicates that traps A1–A4 are thermal stress induced or quenched-in defects by RTA, not secondary defects resulting from annealing of thermal donors.

Comparison Between Rapid Thermal and Furnace Annealing for A-Si Solid Phase Crystallization

1996 ◽  
Vol 424 ◽  
Author(s):  
Reece Kingi ◽  
Yaozu Wang ◽  
Stephen J. Fonash ◽  
Osama Awadelkarim ◽  
John Mehlhaff
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Solid Phase ◽  
Growth Time ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Furnace Annealing ◽  
Lower Growth ◽  
Transient Time

AbstractRapid thermal annealing and furnace annealing for the solid phase crystallization of amorphous silicon thin films deposited using PECVD from argon diluted silane have been compared. Results reveal that the crystallization time, the growth time, and the transient time are temperature activated, and that the resulting polycrystalline silicon grain size is inversely proportional to the annealing temperature, for both furnace annealing and rapid thermal annealing. In addition, rapid thermal annealing was found to result in a lower transient time, a lower growth time, a lower crystallization time, and smaller grain sizes than furnace annealing, for a given annealing temperature. Interestingly, the transient time, growth time, and crystallization time activation energies are much lower for rapid thermal annealing, compared to furnace annealing.We propose two models to explain the observed differences between rapid thermal annealing and furnace annealing.

Rapid Thermal Annealing of Composite TaSi2/n+ Poly-Si Silicide Films

1983 ◽  
Vol 23 ◽  
Author(s):  
D.L. Kwong ◽  
R. Kwor ◽  
B.Y. Tsaur ◽  
K. Daneshvar
Keyword(s):  
Electron Microscopy ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealed Sample ◽  
Vlsi Circuits ◽  
X Ray Diffraction ◽  
Furnace Annealing ◽  
X Ray ◽  
Transmission Electron ◽  
Average Grain Size

ABSTRACTThe formation of composite TaSi2/n+ Poly-Si silicide films through the use of rapid thermal annealing (RTA) is investigated by x-ray diffraction, four point probe, scanning Auger microprobes (SAM) with ion sputter etching, transmission electron microscopy (TEM), scanning electron microscopy (SEM), and capacitance-voltage (C-V) measurements. 0.2 μm polysilicon is deposited on oxidized Si wafer by LPCVD and doped with phosphorus. A layer of 2200 A TaSix is then co-sputtered on polysilicon samples from separate targets. These as-deposited films are then annealed by RTA in an argon ambient for 1 sec. and 10 sec. at various temperatures. X-ray diffraction and SAM results show the rapid formation of a uniform stoichiometric tantalum disilicide via Si migration from polysilicon. TEM micrographs show simlilar results for samples annealed at 1000°C in furnace for 30 min. or by RTA for 1 sec., exhibiting average grain size greater than 1000 A. Sheet resistance of samples annealed by furnace annealing and RTA are comparable. SEM micrographs indicate that the surface morphology of the RTA-annealed sample is superior to that obtained by furnace annealing. These results show that RTA may offer a practical solution to low-resistivity silicide formation in VLSI circuits.

Integrated Processinyg of Silicided Shallow Junctions using Rapid Thermal Annealing Prior to Dopant Activation

1989 ◽  
Vol 146 ◽  
Author(s):  
Leonard Rubin ◽  
Nicole Herbots ◽  
JoAnne Gutierrez ◽  
David Hoffman ◽  
Di Ma
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Titanium Silicide ◽  
Silicon Substrates ◽  
Sheet Resistivity ◽  
Furnace Annealing ◽  
Dopant Activation ◽  
Silicide Layer ◽  
Low Leakage ◽  
Sputter Deposited

ABSTRACTA method for producing shallow silicided diodes for MOS devices (with junction depths of about 0.1 µm), by implanting after forming the silicide layer was investigated. The key to this integrated process is the use of rapid thermal annealing (RTA) to activate the dopants in the silicon, so that there is very little thermal broadening of the implant distribution. Self-aligned titanium silicide (TiSi2) films with thicknesses ranging from 40 to 80 nm were grown by RTA of sputter deposited titanium films on silicon substrates. After forming the TiSi2, arsenic and boron were implanted. A second RTA step was used after implantation to activate these dopants. It was found that implanting either dopant caused a sharp increase in the sheet resistivity of the TiSi2. The resistivity can be easily restored to its original value (about 18 µΩ-cm) by a post implant RTA anneal. RBS analysis showed that arsenic diffuses rapidly in the TiSi2 during RTA at temperatures as low as 600°C. SIMS data indicated that boron was not mobile up to temperatures of 900°C, possibly because it forms a compound with the titanium which precipitates in the TiSi 2. Coalescence of TiSi2 occurs during post implant furnace annealing, leading to an increase in the sheet resistivity. The amount of coalescence depends on the film thickness, but not on whether or not the film had been subject to implantation. Spreading resistance profiling data showed that both arsenic and boron diffused into the TiSi2 during furnace annealing, reducing the surface concentrations of dopant at the TiSi2/Si interface. Both N+/P and P+/N diodes formed by this technique exhibited low leakage currents after the second RTA anneal. This is attributed to removal of the implant damage by the RTA. In summary, the second RTA serves the dual purpose of removing implant damage in the TiSi2 and creating the shallow junction by dopant activation.

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