Bistable Si growth conditions on Ge(100) in synchrotron-radiation-excited atomic layer epitaxy from SiH2Cl2

1997 ◽  
Vol 81 (7) ◽  
pp. 3320-3322 ◽  
Author(s):  
Housei Akazawa
Keyword(s):  
Synchrotron Radiation ◽  
Atomic Layer ◽  
Growth Conditions ◽  
Atomic Layer Epitaxy

Multi-Wafer Atomic Layer Epitaxy Reactor for Device Quality GaAs

1991 ◽  
Vol 222 ◽  
Author(s):  
P. C. Colter ◽  
S. A. Hussien ◽  
A. Dip ◽  
M. U. Erdogan ◽  
S. M. Bedair
Keyword(s):  
Atomic Layer ◽  
Reactor Design ◽  
Growth Conditions ◽  
Atomic Layer Epitaxy ◽  
Limited Growth ◽  
Gas Streams ◽  
Design Considerations ◽  
Mocvd Reactor ◽  
Low Pressure Mocvd ◽  
Reactive Gas

ABSTRACTReactor design considerations are discussed relevant to the two main problems, carbon contamination and low growth rate, facing Atomic Layer Epitaxy (ALE) of GaAs. A new reactor design addressing these problems is described. It utilizes the concept of rotating the substrate between streams of reactant gases. The growth chamber provides baffles and gas jets to shear off and sweep away the thermal boundary layer after exposure to the reactive gas streams. Construction is based on modification of a commercially available low pressure MOCVD reactor equipped with a. load lock. The reactor is capable of processing three, two-inch wafers. A background carbon concentration of about 1015cm−3 and a 77°K mobility of 30,000 cm2/V-sec were achieved. Self limited growth was observed for a growth temperature as high as 600 °C. Controlled p- and n-type doping was accomplished by changing growth conditions and adding silane.

Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate

1996 ◽  
Vol 35 (Part 1, No. 10) ◽  
pp. 5416-5420 ◽  
Author(s):  
Chun Hsing Liu ◽  
Meiso Yokoyama ◽  
Yan Kuin Su
Keyword(s):  
Atomic Layer ◽  
Growth Conditions ◽  
Atomic Layer Epitaxy ◽  
Si Substrate

Growth and evaluation of GaAsN films with different N distribution grown by atomic layer epitaxy method

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGF10
Author(s):  
Masahiro Kawano ◽  
Ryo Minematsu ◽  
Tomohiro Haraguchi ◽  
Atsuhiko Fukuyama ◽  
Hidetoshi Suzuki
Keyword(s):  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
N Distribution

Optical properties of Zn(S,Se) sawtooth superlattices grown by atomic layer epitaxy

1996 ◽  
Vol 80 (4) ◽  
pp. 2363-2366 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshiyuki Nabeta ◽  
Isamu Shimizu ◽  
Takashi Yasuda
Keyword(s):  
Optical Properties ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Steric hindrance effects in atomic layer epitaxy of InAs

1989 ◽  
Vol 55 (3) ◽  
pp. 244-246 ◽  
Author(s):  
Weon G. Jeong ◽  
E. P. Menu ◽  
P. D. Dapkus
Keyword(s):  
Steric Hindrance ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy
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