Thermal stability of W1−xSix/Si multilayers under rapid thermal annealing

1997 ◽  
Vol 81 (5) ◽  
pp. 2229-2235 ◽  
Author(s):  
R. Senderak ◽  
M. Jergel ◽  
S. Luby ◽  
E. Majkova ◽  
V. Holy ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thermal Stability Of

Epitaxial Growth and Thermal Stability of CoSi2 Layer on (100) Si from Co-C Films without Capping Layer

1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn
Keyword(s):  
Thermal Stability ◽  
Epitaxial Growth ◽  
Leakage Current ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carbon Film ◽  
Si Substrate ◽  
Capping Layer ◽  
Potential Applicability ◽  
Thermal Stability Of

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.

Thermal Stability of GdScO3 Dielectric Films Grown on Si and InAlN/GaN Substrates

2009 ◽  
Vol 1155 ◽  
Author(s):  
Karol Fröhlich ◽  
Andrej Vincze ◽  
Edmund Dobročka ◽  
Kristina Hušeková ◽  
Karol Čičo ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Chemical Vapor ◽  
Grazing Incidence ◽  
Organic Chemical ◽  
Strong Reaction ◽  
X Ray ◽  
Tof Sims ◽  
Thermal Stability Of

AbstractWe present analysis of thermal stability of thin GdScO3 films grown on silicon and InAlN/GaN substrates. The GdScO3 films were prepared by liquid injection metal organic chemical vapor deposition at 600 °C. The films were processed after deposition by rapid thermal annealing in nitrogen ambient at 900, 1000 and 1100 °C during 10 s. In addition, annealing of the GdScO3 films on InAlN/GaN substrate at 700 °C during 3 hours was performed. The samples were analyzed by grazing incidence X-ray diffraction (GIXRD), X-ray reflectivity (XRR) and time-of-flight secondary ion mass spectroscopy (ToF SIMS). GIXRD confirmed that the as-deposited GdScO3 films were amorphous. Recrystallization of the films on both substrates occurred at 1100 °C. ToF SIMS depth profile of the films annealed at 1000 °C indicated strong reaction of the GdScO3 film with the Si substrate. For the InAlN/GaN substrate rapid thermal annealing at 900 °C induced diffusion of the In and Al atoms into the top GdScO3 layer. Thermal treatment at 700 °C for 3 hours presents upper limit of the acceptable thermal budget for the GdScO3/InAlN interface.

Thermal Stability of EL2 in GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
X. Boddaert ◽  
X. Letartre ◽  
D. Stievenard ◽  
J. C. Bourgoin
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Vacancy Diffusion ◽  
Technological Processes ◽  
Different Types ◽  
Thermal Stability Of

ABSTRACTDifferent samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the temperatures generally used in technological processes ). The annealing of EL2 near the surface at 850°C has been interpreted as the result of the deviation from the stoichiometry near the surface, due to [As] variation induced by vacancy diffusion. At 450°C, the annealing of EL2 can only be explained by the dissociation of a complex, followed by the migration of one of the constituants, confirming that the EL2 defect is the complex AsGa- Asi.

Thermal stability of sputtered copper films containing dilute insoluble tungsten: Thermal annealing study

2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang
Keyword(s):  
Thermal Stability ◽  
Thermal Annealing ◽  
Stacking Fault ◽  
Stacking Fault Energy ◽  
Silicide Formation ◽  
Copper Silicide ◽  
Cu Films ◽  
Cu Film ◽  
Pure Cu ◽  
Thermal Stability Of

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.

Effects of Tisix/Tinx/Al Contact Metallization Process on the Shallow Junction Related Properties

1987 ◽  
Vol 92 ◽  
Author(s):  
S.W. Sun ◽  
F. Pintchovski ◽  
P.J. Tobin ◽  
R.L. Hance
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Annealing Temperature ◽  
Film Stress ◽  
Silicide Layer ◽  
Contact Metallization ◽  
Barrier Metal ◽  
Al Metallization ◽  
Metallization Process ◽  
Thermal Stability Of

ABSTRACTAn extremely reliable TiSix/TiNx diffusion barrier was formed by the rapid thermal annealing of a thin Ti layer which was sputtered into the contacts before Al metallization. The effects of this barrier metal process on the material properties of heavily implanted n+ and p+ regions were studied. The TiNx-to-TiSix thickness ratio is determined by the dominant reaction at the sintering temperature. Arsenic implanted in the substrate tends to substantially retard the silicidation of Ti. Substantial redistribution of both B and As across the silicide layer was observed during rapid thermal annealing. Film stress was found to be greatly affected by the annealing temperature. Contact resistance, contact electromigration and thermal stability of the structure were also investigated.

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