Thermal Stability of EL2 in GaAs

1988 ◽  
Vol 144 ◽  
Author(s):  
X. Boddaert ◽  
X. Letartre ◽  
D. Stievenard ◽  
J. C. Bourgoin

ABSTRACTDifferent samples originating from the same LEC ingot have been used in order to determine the variation of the EL2 concentration versus depth after different types of thermal annealing ( 450 and 850°C : the temperatures generally used in technological processes ). The annealing of EL2 near the surface at 850°C has been interpreted as the result of the deviation from the stoichiometry near the surface, due to [As] variation induced by vacancy diffusion. At 450°C, the annealing of EL2 can only be explained by the dissociation of a complex, followed by the migration of one of the constituants, confirming that the EL2 defect is the complex AsGa- Asi.

2012 ◽  
Vol 476-478 ◽  
pp. 730-733
Author(s):  
Zhi Dan Lin ◽  
Zi Xian Guan ◽  
Neng Sheng Liu ◽  
Zheng Jun Li

The composites of polypropylene (PP) and wasted PET fabric (WF) were prepared by extrusion blending and injection molding, and then, the interface of the composites was modified by two different types of compatibilizers, i.e., maleic anhydride grafted PP (PP-g-MA) and the mixture of methyl methacrylate (MMA) and styrene (St). The mechanical properties, morphology and thermal stability of these composites were studied.


1999 ◽  
Vol 564 ◽  
Author(s):  
Hwa Sung Rhee ◽  
Dong Kyun Sohn ◽  
Byung Tae Ahn

AbstractA uniform epitaxial CoSi2 layer was grown on (100) Si substrate by rapid thermal annealing at 800°C in N2 ambient without capping layers from an amorphous cobalt-carbon film. The amorphous cobalt-carbon film was deposited on Si substrate by the pyrolysis of cyclopentadienyl dicarbonyl cobalt. Co(η5-C5H5)(CO)2. at 350°C. The leakage current measured on the junction, fabricated with the epitaxial CoSi2 layer and annealed at 1000°C for 30 s. was as low as that of the as-fabricated junction without silicide. indicating that epitaxial (100) CoSi2 is thermally stable at temperatures even above 1000°C and has a potential applicability to the salicide process in sub-half micron devices.


2003 ◽  
Vol 18 (6) ◽  
pp. 1429-1434 ◽  
Author(s):  
C. H. Lin ◽  
J. P. Chu ◽  
T. Mahalingam ◽  
T. N. Lin ◽  
S. F. Wang

This paper describes studies on the thermal annealing behavior of Cu films with 2.3 at.% W deposited on Si substrates. The magnetron cosputtered Cu films with insoluble W were vacuum annealed at temperatures ranging from 200 to 800 °C. Twins were observed in focused ion beam and transmission electron microscopy images of as-deposited and 400 °C annealed pure Cu film, and these twins were attributed to the intrinsic low stacking fault energy. Twins in pure Cu film may provide an additional diffusion path during annealing for copper silicide formation. The beneficial effect of W on the thermal stability of Cu film was supported by the following observations: (i) x-ray diffraction studies show that Cu4Si was formed at 530 °C in Cu–W film, whereas pure Cu film exhibited Cu4Si growth at 400 °C; (ii) shallow diffusion profiles for Cu into Si in Cu–W film through secondary ion mass spectroscopy analyses, and the high activation energy needed for the copper silicide formation from the differential scanning calorimetry study; (iii) addition of W in Cu film increases the stacking fault energy and results in a low twin density.


2019 ◽  
Vol 220 ◽  
pp. 132-140 ◽  
Author(s):  
Danila Morais de Carvalho ◽  
Jennie Berglund ◽  
Célia Marchand ◽  
Mikael E. Lindström ◽  
Francisco Vilaplana ◽  
...  

2011 ◽  
Vol 170 ◽  
pp. 190-193 ◽  
Author(s):  
Irina Zvereva ◽  
Anna Sankovich ◽  
Alexander Missyul

Thermal stability of the layered titanates NdMTiO4 and Nd2M2Ti3O10 (M=Na, K) featured with 1 or 3 perovskite layers has been investigated in thermal annealing at 780 – 1400°С. Their structure variations are monitored using thermal analysis (TGA, DTA), X-ray powder diffraction, and scanning electron microscopy. Judging from the decomposition sequence and the stable temperature range for individual phase, the structure of Nd2M2Ti3O10 with three perovskite layers is identified most stable among these layer titanates. As a whole, the K-containing phases are less stable than the Na-containing ones.


2013 ◽  
Vol 844 ◽  
pp. 217-220 ◽  
Author(s):  
Uraiwan Sookyung ◽  
Woothichai Thaijaroen ◽  
Norbert Vennemann ◽  
Charoen Nakason

Sodium-montmorillonite (Na-MMT) nanoclay was modified with different types of alkylamine organic modifier including primary and quaternary alkylamines. Influence types of alkylamine on properties of natural rubber/clay nanocomposites was investigated. It was found that organoclays caused improvement of mechanical properties of natural rubber, and accelerated vulcanization reaction with higher degree of crosslinking. In addition, organoclay modified with quaternary alkylamine showed significance cure reversion phenomenon which caused reduction of thermal stability. On the other hand, primary alkylamine modified nanoclay caused improvement of thermal stability of natural rubber. Moreover, stress relaxation was observed at the melting temperature of the modifying agent.


2017 ◽  
Vol 727 ◽  
pp. 178-184
Author(s):  
Yu Wang ◽  
Hong Li ◽  
Ying Guo Yang ◽  
Geng Wu Ji ◽  
Kong Chao Shen ◽  
...  

The beta-phase of Zn4Sb3 has been regarded as a very promising thermoelectric material since middle nineties, owing to its unique merit: intermediate temperature region (200-400 °C), made of cheap, non-toxic and abundant elements and high thermoelectric property. However, the thermal stability of Zn4Sb3 seems to be an inherent obstacle for the practical application during the working temperatures. Herein, magnesium doped Zn-Sb semiconductor (Mg0.04Zn3.96Sb3) was investigated thoroughly in-situ during thermal annealing up to 600 K, whilst both microstructure and electronic structures were recorded via the combination of synchrotron-based two dimensional X-ray diffraction techniques and the X-ray photoemission spectroscopy. While the time-resolved grazing incidence XRD reveals the preserved crystal structures during thermal annealing to 600 K, XPS measurement demonstrate the robustness of electronic structures. On basis of these findings, it was concluded in the end that the doping of magnesium significantly improves the thermal stability of zinc-antimonite compounds and introduces minor influence on the electronic structure of Zn-Sb alloy. Our study may propose an effective approach towards the wild application of Zn4Sb3 related thermoelectric materials.


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