SiNx charge-trap nonvolatile memory based on ZnO thin-film transistors

2011 ◽  
Vol 99 (11) ◽  
pp. 112115 ◽  
Author(s):  
Eunkyeom Kim ◽  
Youngill Kim ◽  
Do Han Kim ◽  
Kyoungmi Lee ◽  
Gregory N. Parsons ◽  
...  
RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27699-27706 ◽  
Author(s):  
Manoj Kumar ◽  
Hakyung Jeong ◽  
Dongjin Lee

Nonvolatile memory devices based on solution-processed thin film transistors (TFTs) of undoped ZnO and ZnO doped with Hf and NaF incorporating Ag nanowires (AgNWs) as charge trapping media between the ZnO and insulator interface are demonstrated.


2010 ◽  
Vol 49 (4) ◽  
pp. 04DJ06 ◽  
Author(s):  
Sung-Min Yoon ◽  
Shin-Hyuk Yang ◽  
Chun-Won Byun ◽  
Sang-Hee Ko Park ◽  
Soon-Won Jung ◽  
...  

2008 ◽  
Vol 93 (22) ◽  
pp. 224106 ◽  
Author(s):  
Dipti Gupta ◽  
Manish Anand ◽  
Seong-Wan Ryu ◽  
Yang-Kyu Choi ◽  
Seunghyup Yoo

2019 ◽  
Vol 58 (9) ◽  
pp. 090601 ◽  
Author(s):  
Sung-Min Yoon ◽  
Ji-Hee Yang ◽  
Hyeong-Rae Kim ◽  
Hye-Won Jang ◽  
Min-Ji Park ◽  
...  

2015 ◽  
Vol 111 ◽  
pp. 153-160 ◽  
Author(s):  
Jun Yong Bak ◽  
So-Jung Kim ◽  
Chun-Won Byun ◽  
Jae-Eun Pi ◽  
Min-Ki Ryu ◽  
...  

2015 ◽  
Vol 36 (11) ◽  
pp. 1153-1156 ◽  
Author(s):  
S. J. Kim ◽  
W. H. Lee ◽  
C. W. Byun ◽  
C. S. Hwang ◽  
S. M. Yoon

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