SiNx Charge Trap Nonvolatile Memory Based on ZnO Thin Film Transistor Prepared by Atomic Layer Deposition

2011 ◽  
Author(s):  
E. Kim ◽  
K. Lee ◽  
D. Kim ◽  
G. N. Parsons ◽  
K. Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Nonvolatile Memory ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Charge Trap ◽  
Layer Deposition

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

scholarly journals A Study on Solution-Processed Y2O3 Films Modified by Atomic Layer Deposition Al2O3 as Dielectrics in ZnO Thin Film Transistor

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 969
Author(s):  
Haiyang Xu ◽  
Xingwei Ding ◽  
Jie Qi ◽  
Xuyong Yang ◽  
Jianhua Zhang
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Active Layer ◽  
Dielectric Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Zno Thin Film ◽  
Threshold Voltage Shift ◽  
Layer Deposition

In this work, Y2O3–Al2O3 dielectrics were prepared and used in ZnO thin film transistor as gate insulators. The Y2O3 film prepared by the sol–gel method has many surface defects, resulting in a high density of interface states with the active layer in TFT, which then leads to poor stability of the devices. We modified it by atomic layer deposition (ALD) technology that deposited a thin Al2O3 film on the surface of a Y2O3 dielectric layer, and finally fabricated a TFT device with ZnO as the active layer by ALD. The electrical performance and bias stability of the ZnO TFT with a Y2O3–Al2O3 laminated dielectric layer were greatly improved, the subthreshold swing was reduced from 147 to 88 mV/decade, the on/off-state current ratio was increased from 4.24 × 106 to 4.16 × 108, and the threshold voltage shift was reduced from 1.4 to 0.7 V after a 5-V gate was is applied for 800 s.

Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures

2009 ◽  
Vol 24 (3) ◽  
pp. 035015 ◽  
Author(s):  
Semyung Kwon ◽  
Seokhwan Bang ◽  
Seungjun Lee ◽  
Sunyeol Jeon ◽  
Wooho Jeong ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

Double-layer channel structure based ZnO thin-film transistor grown by atomic layer deposition

2014 ◽  
Vol 8 (4) ◽  
pp. 328-331 ◽  
Author(s):  
Cheol Hyoun Ahn ◽  
So Hee Kim ◽  
Sung Woon Cho ◽  
Myeong Gu Yun ◽  
Hyung Koun Cho
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Double Layer ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Channel Structure ◽  
Zno Thin Film ◽  
Layer Deposition

The Effects of UV Treatment on Thermal and Plasma-Enhanced Atomic Layer Deposition of ZnO Thin Film Transistor

2011 ◽  
Author(s):  
Jae-Min Kim ◽  
S. J. Lim ◽  
Doyoung Kim ◽  
Hyungjun Kim ◽  
Jisoon Ihm ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Uv Treatment ◽  
Layer Deposition

ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Method

2009 ◽  
Vol 1201 ◽  
Author(s):  
Yumi Kawamura ◽  
Nozomu Hattori ◽  
Naomasa Miyatake ◽  
Kazutoshi Murata ◽  
Yukiharu Uraoka
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Large Shift ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method

AbstractIn this study, we deposited zinc oxide (ZnO) thin film by atomic layer deposition (ALD) as an active channel layer in thin film transistor (TFT) using two different oxidizers, water (H2O-ALD) and oxygen radical (PA-ALD). The fabricated TFTs were annealed at various temperatures, in an oxygen ambient gas. The electrical properties of TFTs with PA-ALD ZnO film annealed at the temperature up to 400[oC] improved without any degradation of the subthreshold swing or any large shift of the threshold voltage. Through this study, we found that the high performance ZnO TFTs is possibly obtained using PA-ALD at low temperature, and the electrical properties are dependent on the annealing temperature.

The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor

2010 ◽  
Vol 13 (5) ◽  
pp. H151 ◽  
Author(s):  
S. J. Lim ◽  
Jae-Min Kim ◽  
Doyoung Kim ◽  
Changsoo Lee ◽  
Jin-Seong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Uv Exposure ◽  
Zno Thin Film ◽  
Layer Deposition
Sign in / Sign up

Export Citation Format

Share Document