Surface evolution on vicinal GaAs(001) surfaces in the transition range from two-dimensional to step-flow growth

1997 ◽  
Vol 81 (6) ◽  
pp. 2611-2620 ◽  
Author(s):  
H. Nörenberg ◽  
L. Däweritz ◽  
P. Schützendübe ◽  
K. Ploog
Keyword(s):  
Two Dimensional ◽  
Transition Range ◽  
Surface Evolution ◽  
Step Flow ◽  
Step Flow Growth

Diverse effects of two-dimensional and step flow growth mode induced microstructures on the magnetic anisotropies of SrRuO3 thin films

2006 ◽  
Vol 89 (12) ◽  
pp. 124104 ◽  
Author(s):  
Y. Z. Yoo ◽  
O. Chmaissem ◽  
S. Kolesnik ◽  
A. Ullah ◽  
L. B. Lurio ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Mode ◽  
Two Dimensional ◽  
Step Flow ◽  
Step Flow Growth

Step Instability in Sublimation Epitaxy on Low Off-Axis 6H-SiC

2013 ◽  
Vol 740-742 ◽  
pp. 201-204 ◽  
Author(s):  
Kanaparin Ariyawong ◽  
Valdas Jokubavicius ◽  
Rickard Liljedahl ◽  
Mikael Syväjärvi
Keyword(s):  
Growth Temperature ◽  
Growth Mode ◽  
Mode Competition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Irregularities ◽  
Dimensional Growth ◽  
The Mean ◽  
Homoepitaxial Layers ◽  
Step Flow Growth

The growth of homoepitaxial layers on off-oriented 6H-SiC substrates proceeds via step flow growth. Such epilayers can exhibit irregularities like step bunching, splicing or crossover of steps. The effects of the substrate off-orientation and growth temperature show an influence on formation of surface irregularities. The mean features seem to be given by the growth mode competition of two-dimensional growth to the step-flow growth.

STEP-FLOW GROWTH OF HETEROEPITAXIAL SrRuO3 THIN FILMS ON 0.04° SrTiO3 (001) VICINAL SUBSTRATES

2008 ◽  
Vol 01 (03) ◽  
pp. 253-257 ◽  
Author(s):  
T. J. ZHU ◽  
S. H. YANG ◽  
X. CHEN ◽  
X. X. LIU ◽  
X. B. ZHAO ◽  
...  
Keyword(s):  
Thin Films ◽  
Flow Mode ◽  
Layer By Layer ◽  
Mode Transition ◽  
Two Dimensional ◽  
Step Flow ◽  
Surface Mobility ◽  
Step Flow Growth ◽  
Miscut Angle ◽  
Mode A

We have grown epitaxial SRO thin films of thickness of about 50 nm on the STO (001) substrates with a small miscut angle of 0.04° by step-flow mode. A mode transition from two-dimensional mixed growth of layer-by-layer and step-flow growth to complete step-flow growth was observed, which is associated with the change in the surface mobility of adatoms and the rate of edge diffusion along the steps.

Fabrication of two-dimensional Si/Ge nanowires and nanorings

2003 ◽  
Vol 794 ◽  
Author(s):  
Midori Kawamura ◽  
Bert Voigtländer ◽  
Neelima Paul ◽  
Vasily Cherepanov
Keyword(s):  
Scanning Tunneling Microscope ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Scanning Tunneling ◽  
Two Dimensional ◽  
Chemical Sensitivity ◽  
Tunneling Microscope ◽  
Step Flow ◽  
Self Organized ◽  
Step Flow Growth

ABSTRACTWe show that two-dimensional Si/Ge nanostructures with a thickness of a single atomic layer can be imaged with chemical sensitivity using a scanning tunneling microscope (STM). An atomic layer of Bi terminating the surface is used to distinguish between Si and Ge. This distinction between Si and Ge enabled us to fabricate two-dimensional Si/Ge nanostructures in a controlled way by self-organized growth. Si/Ge nanoring structures consisting of alternating Si and Ge rings having a width of ∼5 nm were grown around a Si core on a Si(111) substrate by molecular beam epitaxy (MBE). The thickness of the Si and Ge rings is only one atomic layer (0.3 nm). Alternating Si/Ge nanowires with a width of ∼3.5 nm and a thickness of 0.3 nm were also fabricated using alternating Si/Ge deposition in the step flow growth mode.

REFLECTION ELECTRON MICROSCOPY OBSERVATION OF THE BEHAVIOR OF MONOATOMIC STEPS ON THE SILICON SURFACES

1997 ◽  
Vol 04 (03) ◽  
pp. 551-558 ◽  
Author(s):  
A. L. ASEEV ◽  
A. V. LATYSHEV ◽  
A. B. KRASILNIKOV
Keyword(s):  
Electron Microscopy ◽  
Silicon Surface ◽  
Silicon Surfaces ◽  
Two Dimensional ◽  
Microscopy Observation ◽  
Step Flow ◽  
Step Motion ◽  
Direct Observations ◽  
Reflection Electron Microscopy ◽  
Step Flow Growth

Ultrahigh vacuum reflection electron microscopy (UHV REM) has been applied to imaging of monoatomic steps on silicon surfaces (111) and (100). The reversible rearrangements of the monoatomic step trains to the step bands and step antibands were found from direct observation of monoatomic step motion during sublimation. The influence of the direction of the electric current heating the specimen was observed. The recent data on atomic mechanisms of step bunching and debunching were reviewed. The monoatomic step behavior on the (100) silicon surface as well as (7×7)-(1×1) phase transition on the (111) surface was described. Direct observations of homoepitaxial processes were carried out. Transition from the step flow growth mode to the nucleation of two-dimensional islands was studied depending on the deposition rate and the substrate temperature. The initial stages of the heteroepitaxial process of germanium, gold and calcium fluorite on the silicon (111) surface were investigated. Finally, the mechanism of step rearrangements during the formation of superstructure domains leading to monoatomic step clustering was discussed.

scholarly journals Temperature-Dependent Photoluminescence of ZnO Thin Films Grown on Off-Axis SiC Substrates by APMOCVD

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 1035
Author(s):  
Ivan Shtepliuk ◽  
Volodymyr Khranovskyy ◽  
Arsenii Ievtushenko ◽  
Rositsa Yakimova
Keyword(s):  
Optical Properties ◽  
Structural Quality ◽  
Organic Chemical ◽  
Zno Films ◽  
Vicinal Surfaces ◽  
Temperature Dependent ◽  
Step Flow ◽  
Step Flow Growth ◽  
First Time ◽  
Temperature Dependent Photoluminescence

The growth of high-quality ZnO layers with optical properties congruent to those of bulk ZnO is still a great challenge. Here, for the first time, we systematically study the morphology and optical properties of ZnO layers grown on SiC substrates with off-cut angles ranging from 0° to 8° by using the atmospheric pressure meta–organic chemical vapor deposition (APMOCVD) technique. Morphology analysis revealed that the formation of the ZnO films on vicinal surfaces with small off-axis angles (1.4°–3.5°) follows the mixed growth mode: from one side, ZnO nucleation still occurs on wide (0001) terraces, but from another side, step-flow growth becomes more apparent with the off-cut angle increasing. We show for the first time that the off-cut angle of 8° provides conditions for step-flow growth of ZnO, resulting in highly improved growth morphology, respectively structural quality. Temperature-dependent photoluminescence (PL) measurements showed a strong dependence of the excitonic emission on the off-cut angle. The dependences of peak parameters for bound exciton and free exciton emissions on temperature were analyzed. The present results provide a correlation between the structural and optical properties of ZnO on vicinal surfaces and can be utilized for controllable ZnO heteroepitaxy on SiC toward device-quality ZnO epitaxial layers with potential applications in nano-optoelectronics.

Growth of (Zn)CdSe quantum structures on vicinal GaAs(001) substrates: step flow growth versus strain effects

2000 ◽  
Vol 214-215 ◽  
pp. 606-609 ◽  
Author(s):  
T Passow ◽  
H Heinke ◽  
D Kayser ◽  
K Leonardi ◽  
D Hommel
Keyword(s):  
Quantum Structures ◽  
Strain Effects ◽  
Step Flow ◽  
Step Flow Growth ◽  
Versus Strain

Development of Cross-Hatch Morphology During Growth of Lattice Mismatched Layers

2001 ◽  
Vol 673 ◽  
Author(s):  
A. Maxwell Andrews ◽  
J.S. Speck ◽  
A.E. Romanov ◽  
M. Bobeth ◽  
W. Pompe
Keyword(s):  
Misfit Dislocation ◽  
Film Growth ◽  
Strain Relaxation ◽  
Dislocation Generation ◽  
Force Microscopy ◽  
Step Flow ◽  
Atomic Force ◽  
Subsequent Step ◽  
Step Flow Growth ◽  
Lateral Scale

ABSTRACTAn approach is developed for understanding the cross-hatch morphology in lattice mismatched heteroepitaxial film growth. It is demonstrated that both strain relaxation associated with misfit dislocation formation and subsequent step elimination (e.g. by step-flow growth) are responsible for the appearance of nanoscopic surface height undulations (0.1-10 nm) on a mesoscopic (∼100 nm) lateral scale. The results of Monte Carlo simulations for dislocation- assisted strain relaxation and subsequent film growth predict the development of cross-hatch patterns with a characteristic surface undulation magnitude ∼50 Å in an approximately 70% strain relaxed In0.25Ga0.75As layers. The model is supported by atomic force microscopy (AFM) observations of cross-hatch morphology in the same composition samples grown well beyond the critical thickness for misfit dislocation generation.

Nanotube self-organization: Formation by step-flow growth

1999 ◽  
Vol 74 (2) ◽  
pp. 194-196 ◽  
Author(s):  
Oleg A. Louchev ◽  
Yoichiro Sato
Keyword(s):  
Self Organization ◽  
Step Flow ◽  
Step Flow Growth
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