Time‐resolved carrier recombination dynamics of 1.3–1.8 μm broadband light emitting diode structures

1996 ◽  
Vol 80 (12) ◽  
pp. 6965-6971 ◽  
Author(s):  
Li Wang ◽  
Shawn‐Yu Lin ◽  
M. J. Hafich ◽  
I. J. Fritz
Keyword(s):  
Light Emitting Diode ◽  
Time Resolved ◽  
Light Emitting ◽  
Carrier Recombination ◽  
Recombination Dynamics

Recombination dynamics of carriers in an InGaN/AlGaN single-quantum-well light-emitting diode under reverse-bias voltages

2000 ◽  
Vol 76 (12) ◽  
pp. 1546-1548 ◽  
Author(s):  
Hiromitsu Kudo ◽  
Hiroki Ishibashi ◽  
Ruisheng Zheng ◽  
Yoichi Yamada ◽  
Tsunemasa Taguchi
Keyword(s):  
Quantum Well ◽  
Reverse Bias ◽  
Light Emitting Diode ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Light Emitting ◽  
Recombination Dynamics

Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region

2006 ◽  
Vol 958 ◽  
Author(s):  
Takashi Suemasu ◽  
Cheng Li ◽  
Tsuyoshi Sunohara ◽  
Yuta Ugajin ◽  
Ken'ichi Kobayashi ◽  
...  
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Time Resolved ◽  
Iron Disilicide ◽  
Light Emitting ◽  
Si Substrates ◽  
Carrier Recombination ◽  
Double Heterostructures ◽  
Time Resolved Photoluminescence

ABSTRACTWe have epitaxially grown Si/β-FeSi2/Si (SFS) structures with β-FeSi2 particles or β-FeSi2 continuous films on Si substrates by molecular beam epitaxy (MBE), and observed 1.6 μm electroluminescence (EL) at room temperature (RT). The EL intensity increases with increasing the number of β-FeSi2 layers. The origin of the luminescence was discussed using time-resolved photoluminescence (PL) measurements. It was found that the luminescence originated from two sources, one with a short decay time (τ∼10 ns) and the other with a long decay time (τ∼100 ns). The short decay time was due to carrier recombination in β-FeSi2, whereas the long decay time was due probably to a defect-related D1 line in Si.

Recombination dynamics in planar and three-dimensional InGaN/GaN light emitting diode structures

2017 ◽  
Vol 32 (13) ◽  
pp. 2456-2463 ◽  
Author(s):  
Angelina Vogt ◽  
Jana Hartmann ◽  
Hao Zhou ◽  
Matin Sadat Mohajerani ◽  
Sönke Fündling ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Three Dimensional ◽  
Light Emitting ◽  
Image Position ◽  
Recombination Dynamics

Abstract

Phonon satellites and time-resolved studies of carrier recombination dynamics in InGaN quantum wells

2007 ◽  
Vol 41 (5-6) ◽  
pp. 419-424 ◽  
Author(s):  
S.M. Olaizola ◽  
W.H. Fan ◽  
D.J. Mowbray ◽  
M.S. Skolnick ◽  
P.J. Parbrook ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Time Resolved ◽  
Carrier Recombination ◽  
Recombination Dynamics ◽  
Ingan Quantum Wells

GaN-Based Light-Emitting Diodes on Selectively Grown Semipolar Crystal Facets

MRS Bulletin ◽  
2009 ◽  
Vol 34 (5) ◽  
pp. 328-333 ◽  
Author(s):  
Ferdinand Scholz ◽  
Thomas Wunderer ◽  
Barbara Neubert ◽  
Martin Feneberg ◽  
Klaus Thonke
Keyword(s):  
Epitaxial Growth ◽  
Wavelength Range ◽  
Light Emitting Diode ◽  
Growth Direction ◽  
Large Area ◽  
Lower Efficiency ◽  
Selective Area Epitaxy ◽  
Time Resolved ◽  
Light Emitting ◽  
Piezoelectric Fields

AbstractIn this article, we briefly review a particular approach to fabricate light-emitting diode (LED) structures on the semipolar side facets of triangular GaN stripes grown by selective area epitaxy. This approach enables a significant reduction of the internal piezoelectric fields in the LED's active area, while still maintaining the well-established c-direction as the main epitaxial growth direction for GaN-based devices on large area substrates. For the latter, these internal fields are responsible for the lower efficiency of GaN-based LEDs in the longer (green) wavelength range. The reduced internal fields of such semipolar LEDs can be directly determined by photoluminescence (PL) investigations on pre-biased LED structures and further confirmed by time-resolved PL studies. The epitaxial growth behavior is strongly facet-dependent, leading to different surface flatnesses on different semipolar facets formed by this procedure and different – indium incorporation efficiencies. An increased indium uptake on semipolar {1101} facets as compared to conventional c-plane layers can help to shift the LED emission to longer wavelengths near 500 nm, despite the significantly reduced field-dependent Stark shift, which helps to reach the green wavelength range in polar LEDs.

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