Effect of the induced electron traps by oxygen plasma treatment on transfer characteristics of organic thin film transistors

2011 ◽  
Vol 99 (11) ◽  
pp. 113301 ◽  
Author(s):  
Bo-Chieh Huang ◽  
Yow-Jon Lin
2018 ◽  
Vol 6 (35) ◽  
pp. 9394-9398 ◽  
Author(s):  
Hoijoon Kim ◽  
Giseok Lee ◽  
Stefan Becker ◽  
Ji-Seon Kim ◽  
Hyoungsub Kim ◽  
...  

We explore a novel patterning method for flexible and transparent Ag nanowire electrodes using oxygen plasma treatment without a toxic etchant and its application to source/drain electrodes of MoS2-based thin-film transistors.


2005 ◽  
Vol 87 (24) ◽  
pp. 243512 ◽  
Author(s):  
Gong Gu ◽  
Michael G. Kane ◽  
James E. Doty ◽  
Arthur H. Firester

2006 ◽  
Vol 965 ◽  
Author(s):  
Kaname Kanai ◽  
Suidong Wang ◽  
Kazuhiko Seki

ABSTRACTWe report the fabrication and characterization of the bottom contact organic thin film transistors and inverter based on a heterostructure of C60 on pentacene. The transistor shows ambipolar transport characteristics with high electron and hole mobilities of 0.23 cm2V−1s−1 and 0.14 cm2V−1s−1, respectively. After exposure to air, the n-channel in C60 is completely degraded whereas the p-channel in pentacene keeps working. Both the n-channel and the p-channel are stable in N2 atmosphere. The inverter exhibits typical transfer characteristics, which are interpreted by the distribution of the accumulated electrons and holes depending on the bias conditions. These results suggest a potential way to fabricate organic complementary circuits with a single organic heterostructure device.


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