scholarly journals Effect of O[sub 2]-Plasma Treatment of Mo on the Crystal Growth Mode of Pentacene of Organic Thin-Film Transistors

2009 ◽  
Vol 156 (8) ◽  
pp. H674 ◽  
Author(s):  
Woong-Kwon Kim ◽  
Bang Joo Song ◽  
Kihyon Hong ◽  
Kisoo Kim ◽  
Jong-Lam Lee
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Organic Thin Film Transistors ◽  
Growth Mode ◽  
Organic Thin Film

Air-flow navigated crystal growth for TIPS pentacene-based organic thin-film transistors

2012 ◽  
Vol 13 (10) ◽  
pp. 1819-1826 ◽  
Author(s):  
Zhengran He ◽  
Jihua Chen ◽  
Zhenzhong Sun ◽  
Greg Szulczewski ◽  
Dawen Li
Keyword(s):  
Thin Film ◽  
Crystal Growth ◽  
Thin Film Transistors ◽  
Air Flow ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film
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