Effects of ambient gas pressure on (1−x) SrTiO3‐xBaTiO3films prepared by pulsed laser deposition

1996 ◽  
Vol 80 (9) ◽  
pp. 4984-4989 ◽  
Author(s):  
Tzu‐Feng Tseng ◽  
Ming‐Hua Yeh ◽  
Kuo‐Shung Liu ◽  
I‐Nan Lin
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Ambient Gas

Effects of target–substrate geometry and ambient gas pressure on FePt nanoparticles synthesized by pulsed laser deposition

2009 ◽  
Vol 255 (8) ◽  
pp. 4372-4377 ◽  
Author(s):  
J.J. Lin ◽  
L.S. Loh ◽  
P. Lee ◽  
T.L. Tan ◽  
S.V. Springham ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Ambient Gas

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Influence of ambient gas on diamond-like carbon films prepared by KrF pulsed laser deposition

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Ambient Gas

Modeling of Film Growth in Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Tyunin
Keyword(s):  
Growth Rate ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Film Growth ◽  
Surface Film ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ambient Gas ◽  
Deposited Films

ABSTRACTFilm growth in pulsed laser deposition (PLD) is described as a process of sorption of ablated species on the substrate surface. Film growth rate and composition are qualitatively analyzed as a function of laser fluence and ambient gas pressure. As an example, analysis of the film composition is carried out for BiSrCaCuO and PbZrTiO pulsed laser deposited films.

Atomic Peening Effect of Ambient Gas on Platinum Films Grown on Amorphous Substrates by Pulsed Laser Deposition

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2629-2633 ◽  
Author(s):  
Tae Yeong Koo ◽  
Ki-Bong Lee ◽  
Yoon-Hee Jeong ◽  
Kwang Yong Kang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Amorphous Substrates ◽  
Ambient Gas
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