Effects of target–substrate geometry and ambient gas pressure on FePt nanoparticles synthesized by pulsed laser deposition

2009 ◽  
Vol 255 (8) ◽  
pp. 4372-4377 ◽  
Author(s):  
J.J. Lin ◽  
L.S. Loh ◽  
P. Lee ◽  
T.L. Tan ◽  
S.V. Springham ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Ambient Gas

Effects of ambient gas pressure on (1−x) SrTiO3‐xBaTiO3films prepared by pulsed laser deposition

1996 ◽  
Vol 80 (9) ◽  
pp. 4984-4989 ◽  
Author(s):  
Tzu‐Feng Tseng ◽  
Ming‐Hua Yeh ◽  
Kuo‐Shung Liu ◽  
I‐Nan Lin
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Gas Pressure ◽  
Laser Deposition ◽  
Ambient Gas

scholarly journals Annealing Condition Effects on the Structural Properties of FePt Nanoparticles Embedded in MgO via Pulsed Laser Deposition

Nanomaterials ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 131
Author(s):  
Tingting Xiao ◽  
Qi Yang ◽  
Jian Yu ◽  
Zhengwei Xiong ◽  
Weidong Wu
Keyword(s):  
Pulsed Laser Deposition ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Annealing Process ◽  
Ultra High Vacuum ◽  
Laser Deposition ◽  
Fept Nanoparticles ◽  
Annealing Conditions ◽  
Vacuum Atmosphere

FePt nanoparticles (NPs) were embedded into a single-crystal MgO host by pulsed laser deposition (PLD). It was found that its phase, microstructures and physical properties were strongly dependent on annealing conditions. Annealing induced a remarkable morphology variation in order to decrease its total free energy. H2/Ar (95% Ar + 5% H2) significantly improved the L10 ordering of FePt NPs, making magnetic coercivity reach 37 KOe at room temperature. However, the samples annealing at H2/Ar, O2, and vacuum all showed the presence of iron oxide even with the coverage of MgO. MgO matrix could restrain the particles’ coalescence effectively but can hardly avoid the oxidation of Fe since it is extremely sensitive to oxygen under the high-temperature annealing process. This study demonstrated that it is essential to anneal FePt in a high-purity reducing or ultra-high vacuum atmosphere in order to eliminate the influence of oxygen.

Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

2000 ◽  
Vol 655 ◽  
Author(s):  
Masanori Okuyama ◽  
Toshiyuki Nakaiso ◽  
Minoru Noda
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Ferroelectric Thin Films ◽  
Laser Deposition ◽  
Polarization Reversal ◽  
Ambient Gas ◽  
Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

Influence of ambient gas on diamond-like carbon films prepared by KrF pulsed laser deposition

2001 ◽  
Vol 10 (3-7) ◽  
pp. 900-904 ◽  
Author(s):  
Kenji Ebihara ◽  
Toshiyuki Nakamiya ◽  
Tamiko Ohshima ◽  
Tomoaki Ikegami ◽  
Shin-ichi Aoqui
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Carbon Films ◽  
Laser Deposition ◽  
Diamond Like Carbon ◽  
Ambient Gas

Modeling of Film Growth in Pulsed Laser Deposition

1995 ◽  
Vol 397 ◽  
Author(s):  
M. Tyunin
Keyword(s):  
Growth Rate ◽  
Pulsed Laser Deposition ◽  
Laser Fluence ◽  
Film Growth ◽  
Surface Film ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Ambient Gas ◽  
Deposited Films

ABSTRACTFilm growth in pulsed laser deposition (PLD) is described as a process of sorption of ablated species on the substrate surface. Film growth rate and composition are qualitatively analyzed as a function of laser fluence and ambient gas pressure. As an example, analysis of the film composition is carried out for BiSrCaCuO and PbZrTiO pulsed laser deposited films.

Atomic Peening Effect of Ambient Gas on Platinum Films Grown on Amorphous Substrates by Pulsed Laser Deposition

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2629-2633 ◽  
Author(s):  
Tae Yeong Koo ◽  
Ki-Bong Lee ◽  
Yoon-Hee Jeong ◽  
Kwang Yong Kang
Keyword(s):  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Amorphous Substrates ◽  
Ambient Gas
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