C+‐energy‐dependent residual ion damage in GaAs:C grown by the low‐energy ion‐beam doping method

1996 ◽  
Vol 80 (7) ◽  
pp. 3828-3833 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Takayuki Shima ◽  
Shinji Kimura ◽  
Joachim Horn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Damage ◽  
Energy Dependent

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 74 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals

1992 ◽  
Vol 279 ◽  
Author(s):  
L. J. Huang ◽  
W. M. Lau ◽  
I. V. Mitchell ◽  
S.-T. Lee
Keyword(s):  
Accumulation Rate ◽  
Ion Beam ◽  
Etching Rate ◽  
Silicon Crystal ◽  
Low Energy ◽  
Implantation Energy ◽  
Ion Energy ◽  
Ion Interactions ◽  
Energy Dependent ◽  
Physical And Chemical

ABSTRACTFluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

scholarly journals Ion damage overrides structural disorder in silicon surface nanopatterning by low-energy ion beam sputtering

2015 ◽  
Vol 109 (4) ◽  
pp. 48003 ◽  
Author(s):  
A. Moreno-Barrado ◽  
R. Gago ◽  
A. Redondo-Cubero ◽  
L. Vázquez ◽  
J. Muñoz-García ◽  
...  
Keyword(s):  
Silicon Surface ◽  
Ion Beam ◽  
Structural Disorder ◽  
Low Energy ◽  
Ion Beam Sputtering ◽  
Ion Damage ◽  
Beam Sputtering

Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

1986 ◽  
Vol 75 ◽  
Author(s):  
B. R. Appleton ◽  
R. A. Zuhr ◽  
T. S. Noggle ◽  
N. Herbots ◽  
S. J. Pennycook
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Low Energy ◽  
Ion Scattering ◽  
Cross Sectional ◽  
Ion Beam Deposition ◽  
Epitaxial Deposition ◽  
Ion Damage ◽  
Low Temperature Epitaxy ◽  
Beam Deposition

AbstractThe technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

1991 ◽  
Vol 223 ◽  
Author(s):  
Richard B. Jackman ◽  
Glenn C. Tyrrell ◽  
Duncan Marshall ◽  
Catherine L. French ◽  
John S. Foord
Keyword(s):  
Ion Beam ◽  
Ion Beams ◽  
Low Energy ◽  
Ion Beam Etching ◽  
Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

2011 ◽  
Author(s):  
Liew Kaeng Nan ◽  
Lee Meng Lung
Keyword(s):  
Sample Preparation ◽  
Semiconductor Device ◽  
Ion Beam ◽  
Critical Dimension ◽  
Low Energy ◽  
Ex Situ ◽  
Good Image Quality ◽  
Ion Beam Etching ◽  
Device Structures ◽  
Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

scholarly journals Low Energy 500 eV Focused Argon Ion Beam Provided by Multi-Ions Species Plasma FIB for Material Science Sample Preparations

2021 ◽  
Vol 27 (S1) ◽  
pp. 20-22
Author(s):  
Chengge Jiao ◽  
Jeremy Graham ◽  
Xu Xu ◽  
Timothy Burnett ◽  
Brandon van Leer
Keyword(s):  
Material Science ◽  
Ion Beam ◽  
Low Energy ◽  
Argon Ion

XTEM study of low-energy ion-beam synthesized Ge nanoclusters inside SiOx matrix

2021 ◽  
Vol 44 (1) ◽  
Author(s):  
SUSHEEL KUMAR GUNDANNA ◽  
PUSPENDU GUHA ◽  
B SUNDARAVEL ◽  
UMANANDA M BHATTA
Keyword(s):  
Ion Beam ◽  
Low Energy
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