Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals

1992 ◽  
Vol 279 ◽  
Author(s):  
L. J. Huang ◽  
W. M. Lau ◽  
I. V. Mitchell ◽  
S.-T. Lee
Keyword(s):  
Accumulation Rate ◽  
Ion Beam ◽  
Etching Rate ◽  
Silicon Crystal ◽  
Low Energy ◽  
Implantation Energy ◽  
Ion Energy ◽  
Ion Interactions ◽  
Energy Dependent ◽  
Physical And Chemical

ABSTRACTFluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

1996 ◽  
Vol 438 ◽  
Author(s):  
N. Tsubouchi ◽  
Y. Horino ◽  
B. Enders ◽  
A. Chayahara ◽  
A. Kinomura ◽  
...  
Keyword(s):  
Carbon Nitride ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
High Vacuum ◽  
Negative Ions ◽  
Low Energy ◽  
Ultra High Vacuum ◽  
Negative Ion ◽  
Nitride Film ◽  
Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

C+‐energy‐dependent residual ion damage in GaAs:C grown by the low‐energy ion‐beam doping method

1996 ◽  
Vol 80 (7) ◽  
pp. 3828-3833 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Takayuki Shima ◽  
Shinji Kimura ◽  
Joachim Horn ◽  
...  
Keyword(s):  
Ion Beam ◽  
Low Energy ◽  
Ion Damage ◽  
Energy Dependent

Low Energy Focused Ion Beam Processing

1992 ◽  
Vol 279 ◽  
Author(s):  
Kenji Gamo
Keyword(s):  
Focused Ion Beam ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Etching Rate ◽  
High Mobility ◽  
Low Energy ◽  
High Electron ◽  
Optimization Of Process Parameters ◽  
High Etching Rate

ABSTRACTFocused ion beam (FIB) techniques have many advantages which stem from being maskless and have attracted much interest for various applications includingin situprocessing. However, reduction of damage and improvement of throughput are problems awaiting solution. For reduction of damage, low energy FIB is promising and for improvement of throughput, understanding of the basic processes and optimization of process parameters based on this understanding is crucial. This paper discusses characteristics of low energy FIB system, ion beam assisted etching and ion implantation, and effect of damage with putting emphasize onin situfabrication. Low energy (0.05–25keV) FIB system being developed forms -lOOnm diameter ion beams and is connected with molecular beam epitaxy system. Many results indicate that low damage, maskless ion beam assisted etching is feasible using low energy beams. Recently it was also shown that for ion beam assisted etching of GaAs, pulse irradiation yields very high etching rate of 500/ion. This indicates that the optimization of the relative ratio of ion irradiation and reactant gas supply as important to achieve high etching rate. Low energy FIB is also important for selective doping for high electron mobility heterostructures of GaAs/GaAlAs, because high mobility is significantly degraded by a slight damage.

Surface and Bulk Microstructural Modifications in Amorphous Carbon Films after Post-Growth Low Energy Ion Beam Irradiation

2000 ◽  
Vol 650 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis
Keyword(s):  
Amorphous Carbon ◽  
Amorphous Matrix ◽  
Ion Beam ◽  
Carbon Films ◽  
Low Energy ◽  
Beam Irradiation ◽  
X Ray Diffraction ◽  
Ion Beam Irradiation ◽  
Ion Energy ◽  
X Ray

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.

Room Temperature Nitridation and Oxidation of Si, Ge and Mbegrown Sige Using Low Energy Ion Beams (0.1-1 Kev).

1991 ◽  
Vol 223 ◽  
Author(s):  
O. Vancauwenberghe ◽  
O. C. Hellman ◽  
N. Herbots ◽  
J. L. Olson ◽  
W. J. Tan ◽  
...  
Keyword(s):  
Room Temperature ◽  
Ion Beam ◽  
Film Properties ◽  
Dielectric Thin Films ◽  
Ion Energy ◽  
Insulating Films ◽  
Ion Energies ◽  
Energy Dependent

ABSTRACTDirect Ion Beam Nitridation (IBN) and Oxidation (IBO) of Si, Ge, and Si0.8Ge0.2 were investigated at room temperature as a function of ion energy. The ion energies were selected between 100 eV and 1 keV to establish the role of energy on phase formation and film properties. Si0.8Ge0.2 films were grown by MBE on Si (100) and transferred in UHV to the ion beam processing chamber. The modification of composition and chemical binding was measured as a function of ion beam exposure by in situ XPS analysis. The samples were nitridized or oxidized using until the N or O 1s signal reached saturation for ion doses between 5×1016 to 1×1017 ions/cm2. Combined characterization by XPS, SEM, ellipsometry and cross-section TEM showed that insulating films of stoichiometric SiO2 and Si-rich Si3N4 were formed during IBO and IBN of Si at all energies used. The formation of Ge dielectric thin films by IBO and IBN was found to be strongly energy dependent and insulating layers could be grown only at the lower energies (E ≤ 200 eV). In contrast to pure Ge, insulating SiGe-oxide and SiGe-nitride were successfully formed on Si0.8Ge0.20.2 at all energies studied.

Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

1993 ◽  
Vol 316 ◽  
Author(s):  
Zhong-Min Ren ◽  
Zhi-Feng Ying ◽  
Xia-Xing Xiong ◽  
Mao-Qi He ◽  
Yuan-Cheng DU ◽  
...  
Keyword(s):  
Activation Energy ◽  
Silicon Nitride ◽  
Substrate Temperature ◽  
Photoelectron Spectroscopy ◽  
Ion Beam ◽  
Atomic Ratio ◽  
Low Energy ◽  
Ion Energy ◽  
Silicon Nitride Films ◽  
Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

Modification Of Properties Of Ion-Beam-Sputtered Yttrium-Oxide Thin Films By Low-Energy Ion Bombardment

1991 ◽  
Vol 223 ◽  
Author(s):  
K. A. Klemm ◽  
L. F. Johnson ◽  
M. B. Moran
Keyword(s):  
Yttrium Oxide ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Energy ◽  
Deposited Energy ◽  
Current Densities ◽  
Argon Ions ◽  
Substrate Temperatures ◽  
Argon Content

ABSTRACTThe effect of low-energy ion bombardment on ion-beam-sputtered yttrium-oxide films was studied. Yttria films were subjected to argon ions accelerated by a potential of up to 500 V with current densities of up to 8 μA/cm2 and were deposited at differing substrate temperatures. Yttria films bombarded during deposition were found to be amorphous, and trends observed with increased ion energy include reduced amount of residual compressive stress, increased argon content, and decreased refractive index, depending on deposited energy and substrate temperature.

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