Square hole fabrication in micro nano scale by low energy ECR ion beam irradiation

Author(s):  
S.A. Pahlovy ◽  
S. Momota ◽  
Yao Yingxue ◽  
M. Kashihara ◽  
K. Nishimura
2007 ◽  
Vol 10-12 ◽  
pp. 344-347 ◽  
Author(s):  
Ying Xue Yao ◽  
Shahjada Ahmed Pahlovy ◽  
Sadao Momota

Most mechanical parts like bearings, gears, and shafts are produced by finishing processes such as hard turning, grinding and/or honing. The durability and reliability of these precision products are directly influenced by mechanical behavior of material. If those parts are in micro nano scale such as micro interconnector, micro valve, micro actuator, and micro switch in that case micro nano mechanical properties is an important factor for better performance. This present paper discusses the low energy ECR ion beam irradiation effects on mechanical property of material in micronano scale. To complete this research ion beams were irradiated for different accelerating energy to Si surface. Nano indentations were done for hardness and elasticity measurement. AFM was used for roughness and depth measurement. From data analysis It shows accelerating energy is an important factor to control mechanical property of material during nano scale fabrication by ion beam.


Author(s):  
Satyanarayan Dhal ◽  
Pritam Das ◽  
Arpita Patro ◽  
Madhuchhanda Swain ◽  
Sheela Rani Hota ◽  
...  

Author(s):  
P.W. Nebiker ◽  
M. Döbeli ◽  
R. Mühle ◽  
M. Suter ◽  
D. Vetterli

2010 ◽  
Vol 205 ◽  
pp. S104-S108 ◽  
Author(s):  
Sk. Faruque Ahmed ◽  
Geon-Ho Rho ◽  
Ji Yeong Lee ◽  
Seong Jin Kim ◽  
Ho-Young Kim ◽  
...  

2000 ◽  
Vol 650 ◽  
Author(s):  
P. Patsalas ◽  
S. Logothetidis

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.


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