Real time spectroellipsometry characterization of optical gap profiles in compositionally‐graded semiconductor structures: Applications to bandgap engineering in amorphous silicon‐carbon alloy solar cells

1996 ◽  
Vol 80 (4) ◽  
pp. 2420-2429 ◽  
Author(s):  
Sangbo Kim ◽  
J. S. Burnham ◽  
Joohyun Koh ◽  
Lihong Jiao ◽  
C. R. Wronski ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Real Time ◽  
Bandgap Engineering ◽  
Optical Gap ◽  
Semiconductor Structures ◽  
Silicon Carbon

Characterization of amorphous silicon carbon alloys by IBA technique and optical spectroscopy

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 519-523 ◽  
Author(s):  
D Gracin ◽  
M Jaksic ◽  
I Bogdanovic-Radovic ◽  
Z Medunic ◽  
T Car ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Spectroscopy ◽  
Silicon Carbon

Hydrogenated amorphous silicon carbon alloys for solar cells

2002 ◽  
Vol 403-404 ◽  
pp. 349-353 ◽  
Author(s):  
Giuseppina Ambrosone ◽  
Ubaldo Coscia ◽  
Stefano Lettieri ◽  
Pasqualino Maddalena ◽  
Carlo Privato ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Carbon ◽  
Hydrogenated Amorphous

CHARACTERIZATION OF AMORPHOUS SILICON SOLAR CELLS

1982 ◽  
Author(s):  
S. Nonomura ◽  
H. Okamoto ◽  
H. Kida ◽  
K. Fukumoto ◽  
Y. Hamakawa
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Silicon Solar Cells

Characterization of hydrogenated amorphous silicon-carbon films deposited by hybrid-plasma CVD

1994 ◽  
Vol 34 (1-4) ◽  
pp. 409-414 ◽  
Author(s):  
Tadashi Fujii ◽  
Kenji Sameshima ◽  
Hiroshi Okada ◽  
Kenji Yoshida ◽  
Tadao Hashimoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Plasma Cvd ◽  
Silicon Carbon ◽  
Hybrid Plasma ◽  
Hydrogenated Amorphous

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 3017-3023 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
P. Favia
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Air Oxidation ◽  
X Ray ◽  
Silicon Carbon

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

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