Band structure ofAI/Si/n-type GaAs with a strained Si interfacial layer

1996 ◽  
Vol 53 (7) ◽  
pp. 3879-3884 ◽  
Author(s):  
Z. Chen ◽  
S. N. Mohammad ◽  
H. Morkoç
Keyword(s):  
Band Structure ◽  
Interfacial Layer ◽  
Strained Si

Intrinsic Carrier Concentration in Strained Si1-XGex/(101)Si

2010 ◽  
Vol 663-665 ◽  
pp. 470-472 ◽  
Author(s):  
Jian Jun Song ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Xian Ying Dai ◽  
Rong Xi Xuan
Keyword(s):  
Band Structure ◽  
Carrier Concentration ◽  
Device Physics ◽  
Strained Si ◽  
Intrinsic Carrier Concentration ◽  
Materials Properties ◽  
Densities Of States ◽  
Valence Bands

The intrinsic carrier concentration is the important parameter for researching strained Si1-xGex materials properties and evaluating Si-based strained devices parameters. In this paper, at the beginning of analyzing the band structure of strained Si1-xGex/(101)Si, the dependence of its effective densities of states for the conduction and valence bands (Nc, Nv) and its intrinsic carrier concentration (ni) on Ge fraction (x) and temperature were obtained. The results show that ni increases significantly due to the effect of strain in strained Si1-xGex/(101)Si. Furthermore, Nc and Nv decrease with increasing Ge fraction (x). In addition, it is also found that as the temperature becomes higher, the increase in Nc and Nv occurs. The results can provide valuable references to the understanding on the Si-based strained device physics and its design.

scholarly journals Band structure of strained Si/(111)Si1-xGex: a first principles investigation

2008 ◽  
Vol 57 (9) ◽  
pp. 5918
Author(s):  
Song Jian-Jun ◽  
Zhang He-Ming ◽  
Dai Xian-Ying ◽  
Hu Hui-Yong ◽  
Xuan Rong-Xi
Keyword(s):  
Band Structure ◽  
First Principles ◽  
Strained Si

Conduction band structure and electron mobility in uniaxially strained Si via externally applied strain in nanomembranes

2011 ◽  
Vol 44 (32) ◽  
pp. 325107 ◽  
Author(s):  
Feng Chen ◽  
Chanan Euaruksakul ◽  
Zheng Liu ◽  
F J Himpsel ◽  
Feng Liu ◽  
...  
Keyword(s):  
Band Structure ◽  
Conduction Band ◽  
Electron Mobility ◽  
Applied Strain ◽  
Strained Si

Calculation of band structure in (101)-biaxially strained Si

2009 ◽  
Vol 52 (4) ◽  
pp. 546-550 ◽  
Author(s):  
JianJun Song ◽  
HeMing Zhang ◽  
HuiYong Hu ◽  
Qiang Fu
Keyword(s):  
Band Structure ◽  
Strained Si

MC Simulation of Strained-Si MOSFET With Full-Band Structure and Quantum Correction

2004 ◽  
Vol 51 (6) ◽  
pp. 962-970 ◽  
Author(s):  
X.-F. Fan ◽  
X. Wang ◽  
B. Winstead ◽  
L.F. Register ◽  
U. Ravaioli ◽  
...  
Keyword(s):  
Band Structure ◽  
Quantum Correction ◽  
Strained Si ◽  
Full Band ◽  
Mc Simulation ◽  
Full Band Structure
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