High‐temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x‐ray absorption fine structure

1996 ◽  
Vol 79 (12) ◽  
pp. 9037-9042 ◽  
Author(s):  
C. Revenant‐Brizard ◽  
J. R. Regnard ◽  
S. Solmi ◽  
A. Armigliato ◽  
S. Valmorri ◽  
...  
Langmuir ◽  
2004 ◽  
Vol 20 (5) ◽  
pp. 1667-1673 ◽  
Author(s):  
John R. Bargar ◽  
Thomas P. Trainor ◽  
Jeffery P. Fitts ◽  
Scott A. Chambers ◽  
Gordon E. Brown

2004 ◽  
Vol 59 (8) ◽  
pp. 1221-1225 ◽  
Author(s):  
Katsuhiko Tani ◽  
Noriyuki Iwata ◽  
Toshihiko Mitsueda ◽  
Masato Ueha ◽  
Hideo Saisho ◽  
...  

2013 ◽  
Vol 68 (9) ◽  
pp. 2007-2011 ◽  
Author(s):  
Chang-Yu Liao ◽  
Fang-Chih Chang ◽  
H. Paul Wang ◽  
Yu-Ling Wei ◽  
Chih-Ju G. Jou

Toxic arsenics in an AsH3 scrubber sludge were thermally stabilized in the temperature range of 973–1,373 K. To better understand how the high-temperature treatments can stabilize arsenics in the sludge, their synchrotron X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) spectra of arsenics were determined. It is found that the reduced arsenic leachability may be associated with the formation of As2O5 (51–59%) and embedded As(V) within the Ca3(PO4)2 matrix (41–49%) in the stabilized sludge. In addition, the As-O bond distances in the stabilized As2O5 are much less than that of normal As2O5 by 0.05–0.07 Å. The shorter As-O bond distances accompanied with the higher bonding energy also have a contribution to the thermal stabilization of arsenics.


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