High‐temperature annealings of Sb and Sb/B heavily implanted silicon wafers studied by near grazing incidence fluorescence extended x‐ray absorption fine structure
Keyword(s):
X Ray
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2004 ◽
Vol 59
(8)
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pp. 1221-1225
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2011 ◽
Vol 115
(5)
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pp. 880-883
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