scholarly journals Numerical Study of Single-Electron Resonant Tunnelling via a Few Ionised Donors in Laterally Confined Resonant Tunnelling Diodes

1996 ◽  
Vol 35 (Part 1, No. 4A) ◽  
pp. 2012-2019 ◽  
Author(s):  
Hiroshi Mizuta
Keyword(s):  
Numerical Study ◽  
Single Electron ◽  
Resonant Tunnelling

scholarly journals Three-Dimensional S-Matrix Simulation of Single-Electron Resonant Tunnelling Through Random Ionised Donor States

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 103-106
Author(s):  
Hiroshi Mizuta
Keyword(s):  
Numerical Study ◽  
Transmission Rate ◽  
Three Dimensional ◽  
Single Electron ◽  
Resonant Tunnelling ◽  
Total Transmission ◽  
Single Donor ◽  
S Matrix ◽  
Donor States ◽  
Current Steps

This paper presents a numerical study of single-electron resonant tunnelling (RT) assisted by a few ionised donors in a laterally-confined resonant tunnelling diode (LCRTD). The 3D multi-mode S-matrix simulation is performed newly introducing the scattering potential of discrete impurities. With a few ionised donors being placed, the calculated energy-dependence of the total transmission rate shows new resonances which are donor-configuration dependent. Visualised electron probability density reveals that these resonances originate in RT via single-donor-induced localised states. The I-V characteristics show current steps of order 0.1 nA per donor before the main current peak, which is quantitatively in good agreement with the experimental results.

scholarly journals SENECA: a New Program for the Analysis of Single-Electron Devices

VLSI Design ◽  
1998 ◽  
Vol 6 (1-4) ◽  
pp. 57-60 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Thermal Activation ◽  
Numerical Study ◽  
Single Electron ◽  
Electron Systems ◽  
Small Deviations ◽  
Finite Speed ◽  
Macroscopic Quantum Tunneling ◽  
Single Electron Devices ◽  
Dc Current ◽  
Hybrid Circuit

We describe a new and efficient method for numerical study of the dynamics and statistics of single-electron systems presenting arbitrary combinations of small tunnel junctions, capacitances, and voltage sources. The method is based on the numerical solution of a master equation describing the time evolution of the probabilities of the electric charge states of the system, with iterative refining of the operational set of states. The method is able to describe very small deviations from the “classical” behavior of a system, due to finite speed of applied signals, thermal activation, and macroscopic quantum tunneling of charge (cotunneling). As an illustration, we briefly study the leakage rate in single-electron traps and the accuracy of several devices (turnstile, pump, and a hybrid circuit) suitable as standards of dc current.

A numerical study of the dynamics and statistics of single electron systems

1995 ◽  
Vol 78 (5) ◽  
pp. 3238-3251 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev ◽  
A. A. Odintsov
Keyword(s):  
Numerical Study ◽  
Single Electron ◽  
Electron Systems

Discrete electron effects in lateral quantum islands

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1148-1152 ◽  
Author(s):  
A. S. Sachrajda ◽  
R. P. Taylor ◽  
C. Dharma-Wardana ◽  
J. A. Adams ◽  
P. Zawadzki ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Level ◽  
Electron Energy ◽  
Coulomb Blockade ◽  
Single Electron ◽  
Electron Energy Level ◽  
Resonant Tunnelling ◽  
Level Spectrum ◽  
Electron Effects ◽  
Electron Interactions

The interplay between two different discrete electron effects has been studied in quantum dots. These are the Coulomb blockade effect and a novel resonant tunnelling process that occurs within the dot itself. We demonstrate that the two processes are governed by two different energy scales. We find that electron–electron interactions (not the single electron energy level spectrum) are required to explain both processes.

A numerical study of the accuracy of single‐electron current standards

1996 ◽  
Vol 79 (12) ◽  
pp. 9155-9165 ◽  
Author(s):  
L. R. C. Fonseca ◽  
A. N. Korotkov ◽  
K. K. Likharev
Keyword(s):  
Numerical Study ◽  
Single Electron ◽  
Electron Current ◽  
Current Standards

Single electron tunnelling through a donor state in a gated resonant tunnelling device

1992 ◽  
Vol 263 (1-3) ◽  
pp. 438-441 ◽  
Author(s):  
M.W. Dellow ◽  
C.J.G.M. Langerak ◽  
P.H. Beton ◽  
T.J. Foster ◽  
P.C. Main ◽  
...  
Keyword(s):  
Single Electron ◽  
Resonant Tunnelling ◽  
Electron Tunnelling ◽  
Donor State

scholarly journals Coherent femtosecond low-energy single-electron pulses for time-resolved diffraction and imaging: A numerical study

2012 ◽  
Vol 112 (11) ◽  
pp. 113109 ◽  
Author(s):  
A. Paarmann ◽  
M. Gulde ◽  
M. Müller ◽  
S. Schäfer ◽  
S. Schweda ◽  
...  
Keyword(s):  
Numerical Study ◽  
Low Energy ◽  
Single Electron ◽  
Time Resolved ◽  
Electron Pulses

Evaluation of single-electron movies of glutamine synthetase molecules

1983 ◽  
Vol 41 ◽  
pp. 280-281
Author(s):  
W. Kunath ◽  
E. Zeitler ◽  
M. Kessel
Keyword(s):  
Electron Microscope ◽  
Glutamine Synthetase ◽  
Electron Irradiation ◽  
Structural Damage ◽  
Structural Changes ◽  
Single Electron ◽  
Continuous Series ◽  
Digital Recording ◽  
Recording Device ◽  
Low Exposure

The features of digital recording of a continuous series (movie) of singleelectron TV frames are reported. The technique is used to investigate structural changes in negatively stained glutamine synthetase molecules (GS) during electron irradiation and, as an ultimate goal, to look for the molecules' “undamaged” structure, say, after a 1 e/Å2 dose.The TV frame of fig. la shows an image of 5 glutamine synthetase molecules exposed to 1/150 e/Å2. Every single electron is recorded as a unit signal in a 256 ×256 field. The extremely low exposure of a single TV frame as dictated by the single-electron recording device including the electron microscope requires accumulation of 150 TV frames into one frame (fig. lb) thus achieving a reasonable compromise between the conflicting aspects of exposure time per frame of 3 sec. vs. object drift of less than 1 Å, and exposure per frame of 1 e/Å2 vs. rate of structural damage.

Single-electron sensitivity with a lens-coupled CCD camera

1993 ◽  
Vol 51 ◽  
pp. 642-643
Author(s):  
G.Y. Fan ◽  
Bruce Mrosko ◽  
Mark H. Ellisman
Keyword(s):  
Focal Length ◽  
Thick Layer ◽  
Ccd Camera ◽  
Single Electron ◽  
Bottom Flange ◽  
X Rays ◽  
Red Phosphor ◽  
Ccd Detector ◽  
Lens Assembly ◽  
Efficient Coupling

A lens coupled CCD camera showing single electron sensitivity has been built for TEM applications. The design is illustrated in Fig. 1. The bottom flange of a JEM-4000EX microscope is replaced by a special flange which carries a large rectangular leaded glass window, 22 mm thick. A 20 μm thick layer of red phosphor is coated on the window, and the entire window is sputter-coated with a thin layer of Au/Pt. A two-lens relay system is used to provide efficient coupling between the image on the phosphor scintillator and the CCD imager. An f1.0 lens (Goerz optical) with front focal length 71.6 mm is used as the collector. A mirror prism, of the Amici type, is used to "bend" the optical path by 90° to prevent X-rays which may penetrate the leaded glass from hitting the CCD detector. Images may be relayed directly to the camera (1:1) or demagnified by a factor of up to 3:1 by moving the lens assembly.

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