Micromagnetic simulation of spin-transfer switching in a full-Heusler Co2FeAl0.5Si0.5 alloy spin-valve nanopillar

2011 ◽  
Vol 110 (3) ◽  
pp. 033913 ◽  
Author(s):  
H. B. Huang ◽  
X. Q. Ma ◽  
Z. H. Liu ◽  
F. Y. Meng ◽  
Z. H. Xiao ◽  
...  
2010 ◽  
Vol 96 (4) ◽  
pp. 042508 ◽  
Author(s):  
Hiroaki Sukegawa ◽  
Shinya Kasai ◽  
Takao Furubayashi ◽  
Seiji Mitani ◽  
Koichiro Inomata

2013 ◽  
Vol 102 (4) ◽  
pp. 042405 ◽  
Author(s):  
H. B. Huang ◽  
X. Q. Ma ◽  
Z. H. Liu ◽  
C. P. Zhao ◽  
S. Q. Shi ◽  
...  

2012 ◽  
Vol 2012 ◽  
pp. 1-12 ◽  
Author(s):  
H. B. Huang ◽  
X. Q. Ma ◽  
Z. H. Liu ◽  
X. M. Shi ◽  
T. Yue ◽  
...  

We investigated spin transfer torque magnetization precession in a nanoscale pillar spin-valve under external magnetic fields using micromagnetic simulation. The phase diagram of the magnetization precession is calculated and categorized into four states according to their characteristics. Of the four states, the precessional state has two different modes: steady precession mode and substeady precession mode. The different modes originate from the dynamic balance between the spin transfer torque and the Gilbert damping torque. Furthermore, we reported the behavior of the temporal evolutions of magnetization components in steady precession mode at the condition of the applied magnetic field using the orbit projection method and explaining perfectly the magnetization components evolution behavior. In addition, a result of a nonuniform magnetization distribution is observed in the free layer due to the excitation of non-uniform mode.


2004 ◽  
Vol 95 (11) ◽  
pp. 6777-6779 ◽  
Author(s):  
J. Grollier ◽  
P. Boulenc ◽  
V. Cros ◽  
A. Hamzić ◽  
A. Vaurès ◽  
...  

SPIN ◽  
2015 ◽  
Vol 05 (01) ◽  
pp. 1550003 ◽  
Author(s):  
Weiwei Zhu ◽  
Zongzhi Zhang ◽  
Jianwei Zhang ◽  
Yaowen Liu

In this paper, spin-dependent multiple reflection effect on spin-transfer torque (STT) has been theoretically and numerically studied in a spin valve nanopillar with a single or dual spin-polarizer. By using a scattering matrix method, we formulate an analytical expression of STT that contains the multiple interfacial reflection effect. It is found that the multiple reflections could enhance the STT efficiency and reduce the critical switching current. The STT efficiency depends on the spin polarization of both the free layer and polarizer. In the nanopillars with a dual spin polarizer, the multiple reflections would cause an asymmetric frequency dependence on the applied current, albeit exactly the same parameters are used in all three ferromagnetic layers, indicating that the frequency in the negative current varies much faster than that in the positive case.


SPIN ◽  
2020 ◽  
Vol 10 (02) ◽  
pp. 2050012
Author(s):  
H. Bhoomeeswaran ◽  
P. Sabareesan

The current-driven magnetization precession dynamics stimulated by Spin-Transfer Torque (STT) in a trilayer spin-valve device (typically Spin-Torque Nanooscillator (STNO)) is numerically investigated by solving the Landau–Lifshitz–Gilbert–Slonczewski (LLGS) equation. We have devised four STNO devices made of ferromagnetic alloys such as CoPt, CoFeB, Fe[Formula: see text]B[Formula: see text]Ni2 and EuO, which act as free and fixed layers. Here, copper acts as a nonmagnetic spacer for all the devices. In this work, we have introduced the current-induced Oersted field, which is generated when a spin-polarized current passes through the device. The generated Oersted field strength is varied by increasing the diameter of the STNO device. Frequency tunability is achieved in all the four devices, whereas the power of the individual device reduces. The frequency and power of the devices depend entirely on the saturation magnetization of the material, which inherently reflects in the current density and the coherence of the spin-polarized DC. In all devices, the frequency increases, whereas the power decreases by increasing the strength of the Oersted field. Among the four devices, the maximum frequency can be tuned up to 104[Formula: see text]GHz with 40[Formula: see text]nm device diameter, which is obtained for EuO material. This opens a promising source and paves a glittering future for the nanoscale spintronic devices.


2005 ◽  
Vol 97 (10) ◽  
pp. 10N705 ◽  
Author(s):  
H. Akimoto ◽  
H. Kanai ◽  
Y. Uehara ◽  
T. Ishizuka ◽  
S. Kameyama

2011 ◽  
Vol 47 (3) ◽  
pp. 649-652 ◽  
Author(s):  
Ching-Ming Lee ◽  
Jyh-Shinn Yang ◽  
Te-ho Wu

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