Interfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures

1996 ◽  
Vol 79 (8) ◽  
pp. 4072 ◽  
Author(s):  
J. M. Liang ◽  
L. J. Chen
Keyword(s):  
Thermal Stability ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Thermal Stability Of

Interfacial Reactions and Thermal Stability of Ultrahigh Vacuum Deposited Multilayered Mo/Si Structures

1995 ◽  
Vol 382 ◽  
Author(s):  
J.M. Liang ◽  
L.J. Chen
Keyword(s):  
Thermal Stability ◽  
Function Analysis ◽  
Ultrahigh Vacuum ◽  
Interfacial Reactions ◽  
Silicide Phase ◽  
Transmission Electron ◽  
Bilayer Period ◽  
Auto Correlation Function ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTInterfacial reactions and thermal stability of ultrahigh vacuum deposited multilayered Mo/Si structures have been investigated by high resolution transmission electron microscopy in conjunction with fast Fourier transform and auto–correlation function analysis. For samples with nominal atomic ratios Mo:Si = 1:2 and 3:1, well defined multilayered Mo/Si structures were obtained after annealing at 250 °C for 30 min. On the other hand, distinct multilayered MoSi2/Si structure was formed only for Mo:Si = 1:2 samples after annealing at 650 °C for 1 h.Multiphases were observed to form simultaneously in samples annealed at 400–500 °C. After 650 °C annealing for 1 h, tetragonal MoSi2 was the only silicide phase observed for the Mo:Si = 1:2 samples, whereas both tetragonal and hexagonal MoSi2 were present in Mo:Si = 3:1 samples. The stability of the multilayered Mo/Si structures was found to depend critically on the atomic ratios of constituent elements, bilayer period and annealing conditions. The results are interpreted in terms of the delicate balance between intermixing of constituent atoms and silicide formation.

The thermal stability of SiGe films deposited by ultrahigh‐vacuum chemical vapor deposition

1991 ◽  
Vol 70 (3) ◽  
pp. 1416-1420 ◽  
Author(s):  
S. R. Stiffler ◽  
J. H. Comfort ◽  
C. L. Stanis ◽  
D. L. Harame ◽  
E. de Frésart ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Thermal Stability Of

Erratum: The thermal stability of SiGe films deposited by ultrahigh vacuum chemical vapor deposition [J. Appl. Phys. 70, 1416 (1991)]

1991 ◽  
Vol 70 (11) ◽  
pp. 7194-7194 ◽  
Author(s):  
S. R. Stiffler ◽  
J. H. Comfort ◽  
C. L. Stanis ◽  
D. L. Harame ◽  
E. de Fresart ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Ultrahigh Vacuum ◽  
Chemical Vapor ◽  
Thermal Stability Of

The Ordered Phase Formation in Ti-Al-Ga Alloys

1970 ◽  
Vol 28 ◽  
pp. 440-441
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel
Keyword(s):  
Thermal Stability ◽  
High Temperature ◽  
Titanium Alloys ◽  
Growth Kinetics ◽  
Stoichiometric Composition ◽  
Good Potential ◽  
Alpha Titanium ◽  
Cold Rolled ◽  
Kinetics Of ◽  
Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

Microstructure studies of tungsten silicide schottky contacts on Gaas

1987 ◽  
Vol 45 ◽  
pp. 328-329
Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie
Keyword(s):  
Thermal Stability ◽  
Field Effect Transistors ◽  
Schottky Contact ◽  
Schottky Contacts ◽  
Excellent Thermal Stability ◽  
Barrier Heights ◽  
Gaas Substrates ◽  
Film Adhesion ◽  
Threshold Voltages ◽  
Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

Thermal stability of Al-Cu-Fe icosahedral alloys

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of

Practical criteria for the thermal stability of a unidimensional superconductor

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis
Keyword(s):  
Thermal Stability ◽  
Thermal Stability Of
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