Interpretation of double‐crystal x‐ray rocking curves in relaxed strained‐layer structures

1996 ◽  
Vol 79 (6) ◽  
pp. 3011-3015 ◽  
Author(s):  
M. A. Lourenço ◽  
D. J. Dunstan
1985 ◽  
Vol 29 ◽  
pp. 367-374
Author(s):  
E. J. Fantner

AbstractElastic strain significantly affects the electric and optical properties of PbTe/Pb1-xSnxTe - strained-layer superlattices. In the range of 10 - 350K the temperature dependence of the elastic strain present in these superlattices was measured by double-crystal x-ray diffraction. For superlattice periods smaller than 100nm High-angle x-ray interferences were observed. Using a novel method, which makes use of the High-angle interferences both for symmetrical as well as for asymmetrical reflections in a theta-twotheta scan with a narrow detector slit, the relative inclination of equivalent lattice planes due the elastic strain was measured. The components of the complete strain tensor of the constituent layers can be determined seperately even if their unstrained lattice constants are not known with sufficient accuracy as is the case in ternary and quaternary compounds. The lattice mismatch of up to 0.4% for Sn-contents smaller than 20% was found to be accommodated almost completely by elastic misfit strain. The amount of strain is shared between the constituent layers inversely to their relative thicknesses as long as the superlattice as a whole is much thicker than the buffer layer. Below room temperature an additional temperature dependent tensile strain due to differnt thermal expansion coefficients of the film and the BaF2-substrate is measured quantitatively.


1990 ◽  
Vol 198 ◽  
Author(s):  
C.R. Whitehouse ◽  
C.F. Mcconville ◽  
G.M. Williams ◽  
A.G. Cullis ◽  
S.J. Barnett ◽  
...  

ABSTRACTThe MBE growth and related materials characterisation of InSb/InAlSb strained-layer structures is described. Band-gap considerations and critical thickness calculations are presented and indicate that this material system should offer considerable device potential. Detailed structural studies, performed using both transmission electron microscopy and X-ray diffraction, confirm the growth of high quality multiple quantum-wells, and 2K photoluminescence has shown corresponding energy upshifted transitions.


1987 ◽  
Vol 102 ◽  
Author(s):  
N. Hamaguchi ◽  
T. P. Humphreys ◽  
C. A. Parker ◽  
S. M. Bedair ◽  
B-L. Jiang ◽  
...  

ABSTRACTX-ray topography(XRT) and EBIC have been used to study the generation of misfit dislocations in strained layer structures. Two structures studied were GaAs1−yPy(y=0.15) film and SLS consisting of InxGa1−xAs(x=0.08) and GaAs1−y Py(y=0.16) layers. XRT and EBIC techniques gave consistent results for the behavior of dislocations. The value of the critical thickness for generation of misfit dislocations in the former was found to be few times larger than that in the latter. EBIC image showed that a SLS lattice matched to the substrate is effective in reducing defects originating from the substrate.


1991 ◽  
Vol 40 (3) ◽  
pp. 441
Author(s):  
TIAN LIANG-GUANG ◽  
ZHU NAN-CHANG ◽  
CHEN JING-YI ◽  
LI RUN-SHEN ◽  
XU SHUN-SHENG ◽  
...  

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