Improved Airy function formalism for study of resonant tunneling in multibarrier semiconductor heterostructures

1996 ◽  
Vol 79 (2) ◽  
pp. 886 ◽  
Author(s):  
Shaune S. Allen ◽  
Steven L. Richardson
Keyword(s):  
Resonant Tunneling ◽  
Airy Function ◽  
Semiconductor Heterostructures ◽  
Function Formalism

THE PAULI PRINCIPLE AND QUANTUM TRANSPORT

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Fock Space ◽  
Pauli Principle ◽  
Semiconductor Heterostructures ◽  
Rate Equations ◽  
Semiconductor Quantum Wells ◽  
Occupation Numbers ◽  
The One ◽  
Space Wave

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.

Study of resonant tunneling structures: A hybrid incremental Airy function plane‐wave approach

1990 ◽  
Vol 67 (6) ◽  
pp. 3011-3017 ◽  
Author(s):  
Cher Ming Tan ◽  
Jingming Xu ◽  
Stefan Zukotynski
Keyword(s):  
Plane Wave ◽  
Resonant Tunneling ◽  
Airy Function ◽  
Wave Approach

EFFECT OF APPLIED BIAS ON TRANSMISSION PROPERTIES OF DIMER FIBONACCI SUPERLATTICES

2009 ◽  
Vol 23 (19) ◽  
pp. 2409-2420 ◽  
Author(s):  
Z. AZIZ ◽  
S. BENTATA ◽  
R. DJELTI ◽  
E. ALANDALOUSSI
Keyword(s):  
Transfer Matrix ◽  
Airy Function ◽  
Linear Variation ◽  
Applied Bias ◽  
Transmission Properties ◽  
Function Formalism

In this study, we have numerically examined the effect of applied bias on the transmission across dimer fibonacci height barrier superlattices (DFHBSLs) by using the exact Airy function formalism and the transfer matrix technique. Formation of miniband structure was observed, and its width showed a linear variation with the applied bias.

Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

1998 ◽  
Author(s):  
Michihiko Suhara ◽  
Lars-Erik Wernersson ◽  
Boel Gustafson ◽  
Niclas Carlsson ◽  
Werner Seifert ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Semiconductor Heterostructures

Transit time for resonant tunneling in semiconductor heterostructures

1991 ◽  
Vol 70 (8) ◽  
pp. 4626-4628 ◽  
Author(s):  
Gastón García‐Calderón ◽  
Alberto Rubio
Keyword(s):  
Transit Time ◽  
Resonant Tunneling ◽  
Semiconductor Heterostructures
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