RESONANT TUNNELING IN SEMICONDUCTOR HETEROSTRUCTURES

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-423-C5-430 ◽  
Author(s):  
E. E. MENDEZ
Keyword(s):  
Resonant Tunneling ◽  
Semiconductor Heterostructures

THE PAULI PRINCIPLE AND QUANTUM TRANSPORT

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Fock Space ◽  
Pauli Principle ◽  
Semiconductor Heterostructures ◽  
Rate Equations ◽  
Semiconductor Quantum Wells ◽  
Occupation Numbers ◽  
The One ◽  
Space Wave

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.

Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

1998 ◽  
Author(s):  
Michihiko Suhara ◽  
Lars-Erik Wernersson ◽  
Boel Gustafson ◽  
Niclas Carlsson ◽  
Werner Seifert ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Semiconductor Heterostructures

Transit time for resonant tunneling in semiconductor heterostructures

1991 ◽  
Vol 70 (8) ◽  
pp. 4626-4628 ◽  
Author(s):  
Gastón García‐Calderón ◽  
Alberto Rubio
Keyword(s):  
Transit Time ◽  
Resonant Tunneling ◽  
Semiconductor Heterostructures

Electrical Spin Injection and Transport in Semiconductor Spintronic Devices

MRS Bulletin ◽  
2003 ◽  
Vol 28 (10) ◽  
pp. 740-748 ◽  
Author(s):  
B.T. Jonker ◽  
S.C. Erwin ◽  
A. Petrou ◽  
A.G. Petukhov
Keyword(s):  
Resonant Tunneling ◽  
Spin Injection ◽  
Polarized Light ◽  
Semiconductor Heterostructures ◽  
Light Emitting ◽  
Spintronic Devices ◽  
Tunneling Diode ◽  
Spin Polarized ◽  
Interband Tunneling ◽  
Electrical Spin

AbstractSemiconductor heterostructures that utilize carrier spin as a new degree of freedom offer entirely new functionality and enhanced performance over conventional devices. We describe the essential requirements for implementing this technology, focusing on the materials and interface issues relevant to electrical spin injection into a semiconductor. These are discussed and illustrated in the context of several prototype semiconductor spintronic devices, including spin-polarized light-emitting diodes and resonant tunneling structures such as the resonant interband tunneling diode.

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