Transit time for resonant tunneling in semiconductor heterostructures

1991 ◽  
Vol 70 (8) ◽  
pp. 4626-4628 ◽  
Author(s):  
Gastón García‐Calderón ◽  
Alberto Rubio
Keyword(s):  
Transit Time ◽  
Resonant Tunneling ◽  
Semiconductor Heterostructures

THE PAULI PRINCIPLE AND QUANTUM TRANSPORT

1994 ◽  
Vol 08 (21n22) ◽  
pp. 1377-1385 ◽  
Author(s):  
S.A. GURVITZ ◽  
H.J. LIPKIN ◽  
Ya. S. PRAGER
Keyword(s):  
Quantum Wells ◽  
Resonant Tunneling ◽  
Fock Space ◽  
Pauli Principle ◽  
Semiconductor Heterostructures ◽  
Rate Equations ◽  
Semiconductor Quantum Wells ◽  
Occupation Numbers ◽  
The One ◽  
Space Wave

A new method using Fock space wave functions is proposed for studying resonant tunneling in semiconductor quantum wells. The use of binary occupation numbers as dynamical variables, rather than properties of individual electrons, manifestly takes account of electron statistics, which enables investigation of the influence of the Pauli principle on resonant tunneling in the presence of inelastic scattering. Applied to the evaluation of the resonant current in semiconductor heterostructures, our approach predicts considerable deviations from the one-electron and rate equations pictures.

Estimation of Transit Time in Terahertz Oscillating Resonant Tunneling Diodes with Graded Emitter and Thin Barriers

2012 ◽  
Vol E95-C (3) ◽  
pp. 401-407 ◽  
Author(s):  
Atsushi TERANISHI ◽  
Safumi SUZUKI ◽  
Kaoru SHIZUNO ◽  
Masahiro ASADA ◽  
Hiroki SUGIYAMA ◽  
...  
Keyword(s):  
Transit Time ◽  
Resonant Tunneling ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Gated Resonant Tunneling Structures with Buried Tungsten Grating Adjacent to Semiconductor Heterostructures

1998 ◽  
Author(s):  
Michihiko Suhara ◽  
Lars-Erik Wernersson ◽  
Boel Gustafson ◽  
Niclas Carlsson ◽  
Werner Seifert ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Semiconductor Heterostructures
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