scholarly journals Highly efficient light emission from stacking faults intersecting nonpolar GaInN quantum wells

2011 ◽  
Vol 99 (1) ◽  
pp. 011901 ◽  
Author(s):  
H. Jönen ◽  
U. Rossow ◽  
H. Bremers ◽  
L. Hoffmann ◽  
M. Brendel ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Stacking Faults ◽  
Highly Efficient

Lead chlorine cluster assembled one-dimensional halide with highly efficient broadband white-light emission

2021 ◽  
Author(s):  
Jian-Qiang Zhao ◽  
Chen Sun ◽  
Meng Yue ◽  
Yan Meng ◽  
Xian-Mei Zhao ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
White Light ◽  
Light Emission ◽  
White Light Emission ◽  
One Dimensional ◽  
Highly Efficient

One new lead chlorine cluster assembled 1D non-perovskite halide of [DTHPE]2Pb3Cl10 was synthesized which displays strong broadband bluish white light emission with a high photoluminescence quantum efficiency of 19.45% exceeding those of previously reported 2D lead perovskites.

Piezoelectric field and its influence on the pressure behavior of the light emission from GaN/AlGaN strained quantum wells

2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Strained Quantum Wells ◽  
Pressure Behavior ◽  
Piezoelectric Field

scholarly journals Eco‐Friendly and Highly Efficient Light‐Emission Ferroelectric Scintillators by Precise Molecular Design (Adv. Funct. Mater. 35/2021)

2021 ◽  
Vol 31 (35) ◽  
pp. 2170258
Author(s):  
Jun‐Yi Li ◽  
Chang‐Feng Wang ◽  
Haodi Wu ◽  
Lang Liu ◽  
Qiu‐Ling Xu ◽  
...  
Keyword(s):  
Light Emission ◽  
Molecular Design ◽  
Highly Efficient

Polychromatic light emission from single InGaN quantum wells grown on pyramidal GaN facets

2005 ◽  
Vol 87 (13) ◽  
pp. 131911 ◽  
Author(s):  
S. Srinivasan ◽  
M. Stevens ◽  
F. A. Ponce ◽  
T. Mukai
Keyword(s):  
Quantum Wells ◽  
Light Emission ◽  
Polychromatic Light ◽  
Ingan Quantum Wells

Quantitative analysis of light emission from SiGe quantum wells

1995 ◽  
Vol 157 (1-4) ◽  
pp. 1-10 ◽  
Author(s):  
S. Fukatsu ◽  
H. Akiyama ◽  
Y. Shiraki ◽  
H. Sakaki
Keyword(s):  
Quantitative Analysis ◽  
Quantum Wells ◽  
Light Emission ◽  
Sige Quantum Wells

Defects in Germanium Nanocrystals Produced by Ion Implantation

2013 ◽  
Vol 709 ◽  
pp. 148-152
Author(s):  
Yu Juan Zhang ◽  
Lei Shang
Keyword(s):  
Electron Microscopy ◽  
Light Emission ◽  
Stacking Faults ◽  
Implantation Dose ◽  
Defect Structures ◽  
High Temperature Annealing ◽  
Planar Defects ◽  
Transmission Electron ◽  
Microstructural Defects ◽  
Germanium Nanocrystals

Germanium nanocrystals (Ge-nc) were produced by the implantation of Ge+ into a SiO2 film deposited on (100) Si, followed by a high-temperature annealing. High-resolution transmission electron microscopy (HRTEM) has been used to investigate the defect structures inside the Ge-nc produced by different implantation doses (1×1016, 2×1016, 4×1016 and 8×1016 cm-2). It has been found that the planar defects such as nanotwins and stacking faults (SFs) are dominant in Ge-nc (60%) for the samples with implantation doses higher than 2×1016 cm-2, while for the sample with an implantation dose lower than 1×1016 cm-2, fewer planar defects are observed in the Ge-nc (20%). The percentages of nanotwins in the planar defects are 87%, 77%, 67% and 60% in four samples, respectively. The twinning structures include single twins, double twins and multiple twins. We also found that there are only SFs in some nanocrystals, and in others the SFs coexist with twins. These microstructural defects are expected to play an important role in the light emission from the Ge-nc.

Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells

2014 ◽  
Vol 105 (5) ◽  
pp. 053104 ◽  
Author(s):  
Ryan G. Banal ◽  
Yoshitaka Taniyasu ◽  
Hideki Yamamoto
Keyword(s):  
Quantum Wells ◽  
Ultraviolet Light ◽  
Light Emission ◽  
Emission Properties ◽  
Deep Ultraviolet

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes

2006 ◽  
Vol 527-529 ◽  
pp. 351-354 ◽  
Author(s):  
M.S. Miao ◽  
Walter R.L. Lambrecht
Keyword(s):  
Band Structure ◽  
Quantum Wells ◽  
First Principles ◽  
Driving Force ◽  
Stacking Faults ◽  
Band Gaps ◽  
Partial Dislocations ◽  
Band Structure Calculations ◽  
Thermodynamic Driving Force ◽  
Structure Calculations

The electronic driving force for growth of stacking faults (SF) in n-type 4H SiC under annealing and in operating devices is discussed. This involves two separate aspects: an overall thermodynamic driving force due to the capture of electrons in interface states and the barriers that need to be overcome to create dislocation kinks which advance the motion of partial dislocations and hence expansion of SF. The second problem studied in this paper is whether 3C SiC quantum wells in 4H SiC can have band gaps lower than 3C SiC. First-principles band structure calculations show that this is not the case due to the intrinsic screening of the spontaneous polarization fields.

Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation

2002 ◽  
Vol 91 (12) ◽  
pp. 9622 ◽  
Author(s):  
S. P. Łepkowski ◽  
T. Suski ◽  
P. Perlin ◽  
V. Yu. Ivanov ◽  
M. Godlewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emission
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