Study of light emission from GaN/AlGaN quantum wells under power-dependent excitation

2002 ◽  
Vol 91 (12) ◽  
pp. 9622 ◽  
Author(s):  
S. P. Łepkowski ◽  
T. Suski ◽  
P. Perlin ◽  
V. Yu. Ivanov ◽  
M. Godlewski ◽  
...  
Keyword(s):  
2001 ◽  
Vol 79 (10) ◽  
pp. 1483-1485 ◽  
Author(s):  
S. P. Łepkowski ◽  
H. Teisseyre ◽  
T. Suski ◽  
P. Perlin ◽  
N. Grandjean ◽  
...  

2005 ◽  
Vol 87 (13) ◽  
pp. 131911 ◽  
Author(s):  
S. Srinivasan ◽  
M. Stevens ◽  
F. A. Ponce ◽  
T. Mukai

1995 ◽  
Vol 157 (1-4) ◽  
pp. 1-10 ◽  
Author(s):  
S. Fukatsu ◽  
H. Akiyama ◽  
Y. Shiraki ◽  
H. Sakaki

2014 ◽  
Vol 105 (5) ◽  
pp. 053104 ◽  
Author(s):  
Ryan G. Banal ◽  
Yoshitaka Taniyasu ◽  
Hideki Yamamoto

Nanomaterials ◽  
2020 ◽  
Vol 10 (5) ◽  
pp. 1006
Author(s):  
Hongqiang Li ◽  
Jianing Wang ◽  
Jinjun Bai ◽  
Shanshan Zhang ◽  
Sai Zhang ◽  
...  

The realization of a fully integrated group IV electrically driven laser at room temperature is an essential issue to be solved. We introduced a novel group IV side-emitting laser at a wavelength of 1550 nm based on a 3-layer Ge/Si quantum well (QW). By designing this scheme, we showed that the structural, electronic, and optical properties are excited for lasing at 1550 nm. The preliminary results show that the device can produce a good light spot shape convenient for direct coupling with the waveguide and single-mode light emission. The laser luminous power can reach up to 2.32 mW at a wavelength of 1550 nm with a 300-mA current. Moreover, at room temperature (300 K), the laser can maintain maximum light power and an ideal wavelength (1550 nm). Thus, this study provides a novel approach to reliable, efficient electrically pumped silicon-based lasers.


2004 ◽  
Vol 831 ◽  
Author(s):  
Barbara Neubert ◽  
Frank Habel ◽  
Peter Bruckner ◽  
Ferdinand Scholz ◽  
Till Riemann ◽  
...  

ABSTRACTNon (0001) GalnN QWs have been grown by low pressure MOVPE on side facets of triangular shaped selectively grown GaN stripes. By analysing low temperature photo- and cathodoluminescence and room temperature electroluminescence, we found strong indications, that both, In and Mg are less efficiently incorporated on these side facets compared to the common (0001) plane with even lower efficiency for stripes running along (1–100) compared to (11–20). Nevertheless, we observed strong light emission from these quantum wells, supposed to be at least partly caused by the reduced piezo-electric field.


1996 ◽  
Author(s):  
Yoshinobu Kimura ◽  
Kiyokazu Nakagawa ◽  
Kazumasa Takagi ◽  
Masanobu Miyao

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