Oxygen defect center red room temperature photoluminescence from freshly etched and oxidized porous silicon

1995 ◽  
Vol 78 (4) ◽  
pp. 2671-2674 ◽  
Author(s):  
S. M. Prokes ◽  
W. E. Carlos
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Oxygen Defect ◽  
Defect Center ◽  
Room Temperature Photoluminescence ◽  
Oxidized Porous Silicon

Room Temperature Photoluminescence of Er-Doped Porous Silicon at 1.54μm

1994 ◽  
Author(s):  
Tadamasa KIMURA ◽  
Akinori YOKOI ◽  
Hisakazu HORIGUCHI ◽  
Riyu IKEDA ◽  
Riichiro SAITO ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Er Doped

Comparison of room temperature photoluminescence decays in anodically oxidized crystalline and X-ray-amorphous porous silicon

1993 ◽  
Vol 57 (1-6) ◽  
pp. 105-109 ◽  
Author(s):  
E. Bustarret ◽  
I. Mihalcescu ◽  
M. Ligeon ◽  
R. Romestain ◽  
J.C. Vial ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Room Temperature ◽  
X Ray ◽  
Room Temperature Photoluminescence

scholarly journals Morphology and luminescence of photo-electrochemically synthesized porous silicon: Influence of varying current density

2017 ◽  
Vol 13 (4) ◽  
pp. 708-710
Author(s):  
Asad Thahe ◽  
Hazri Bakhtiar ◽  
Noriah Bidin ◽  
Zainuriah Hassan ◽  
Zainal Abidin Talib ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Room Temperature ◽  
Gravimetric Method ◽  
Etching Time ◽  
Time Duration ◽  
High Quality ◽  
Force Microscopy ◽  
Room Temperature Photoluminescence ◽  
Atomic Force

Achieving high quality porous silicon (PSi) materials with desired porosity remains challenging. Three good qualities of PSi samples are prepared by Photo electro-chemically etching a piece of n-type Si inside the solution of 20 M HF, 10 M C2H5OH and 10 M H2O2 at fixed etching time duration (30 min) and varying current density (15 mA/cm2, 30 mA/cm2 and 45 mA/cm2). As-prepared sample morphologies are characterized via scanning electron microscopy (SEM) and atomic force microscopy (AFM). The gravimetric method is used to estimate the thickness and porosity of the prepared samples. Current density (etching time) dependent morphologies, electronic bandgap and room temperature photoluminescence (PL) properties of such PSi nanostructures are evaluated. These PSi structures revealed enhanced rectifying characteristics with increasing current density. 

AGING EFFECT ON THE PHOTOSYNTHESIZED POROUS SILICON

2008 ◽  
Vol 22 (04) ◽  
pp. 417-422 ◽  
Author(s):  
ALWAN M. ALWAN ◽  
OMAR A. ABDULRAZAQ
Keyword(s):  
Porous Silicon ◽  
Relative Intensity ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Semiconductor Device ◽  
Aging Effect ◽  
Blue Shift ◽  
Ambient Condition ◽  
Metal Insulator ◽  
Room Temperature Photoluminescence

The photoluminescence spectrum of the freshly photosynthesized porous silicon (PS) has been investigated. This measurement was repeated after three and six months for the same sample after storage under ambient condition (open air at room temperature). Photoluminescence (PL) measurements of the stored PS show different peak positions and intensity width as compared with the results of the fresh PS. A blue shift in PL peak positions with aging time was observed. PL relative intensity is strongly diminished after 6 months of aging. Dark I-V characteristics of Al/PS/n - Si/Al structure shows a behavior of PS/n - Si isotype heterojunction for fresh device and a MIS (metal-insulator-semiconductor) device due to contribution of Al/PS Schottky barrier after aging, essentially after 6 months.

Comparison of the Band Gap of Porous Silicon as Measured by Photoelectron Spectroscopy and Photoluminescence

1994 ◽  
Vol 358 ◽  
Author(s):  
T. Van Buuren ◽  
S. Eisebitt ◽  
S. Patitsas ◽  
S. Ritchie ◽  
T. Tiedje ◽  
...  
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Absorption Edge ◽  
Photoelectron Spectroscopy ◽  
Photoluminescence Spectrum ◽  
Room Temperature ◽  
Room Temperature Photoluminescence ◽  
Preparation Conditions ◽  
Peak Energy

ABSTRACTThe peak energy of the room temperature photoluminescence of porous silicon is compared with the bandgap determined from photoelectron spectroscopy measurements for a series of porous silicon samples prepared under different conditions. The photoluminescence bandgap is found to be smaller than the photoelectron spectroscopy bandgap, but exhibits the same trend with preparation conditions. The width of both the photoluminescence spectrum and the L-absorption edge increases when the current density during the preparation is increased or the sample is allowed to soak in HF after preparation.

Carrier Dynamics in Porous Silicon: from the Femtosecond to the Second

1994 ◽  
Vol 358 ◽  
Author(s):  
Philippe M. Fauchet
Keyword(s):  
Porous Silicon ◽  
Time Domain ◽  
Room Temperature ◽  
Auger Recombination ◽  
Excitation Intensity ◽  
Carrier Dynamics ◽  
Time Resolved ◽  
Oxidized Porous Silicon ◽  
Red Luminescence ◽  
Absorption Measurements

ABSTRACTThe luminescence in red-emitting porous silicon exhibits a distribution of lifetimes in the μsec time domain at room temperature and in the msec time domain at cryogenic temperatures. However, the luminescence and carrier dynamics in porous silicon display transients that vary from much less than 1 psec to ∼ 1 sec, depending on the measurement conditions and sample preparation. We have investigated the carrier dynamics in porous silicon by two time-resolved techniques. The blue photoluminescence of oxidized porous silicon has been measured with 100 ps time resolution as a function of the oxidation method, emission wavelength, excitation intensity and measurement temperature. The blue luminescence has a distinct origin from the well-studied red luminescence and we attribute it to defects in the oxide. Femtosecond photoinduced absorption measurements have been performed on thin red-emitting porous silicon films. The wavelength and intensity dependence of the recovery are interpreted in terms of trapping and of Auger recombination at high excitation intensity. Our results also show conclusively that red-emitting porous silicon is not a direct gap semiconductor.

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