Low‐temperature photochromic response of phosphorus‐doped bismuth silicon oxide

1995 ◽  
Vol 78 (3) ◽  
pp. 2010-2014 ◽  
Author(s):  
J. S. McCullough ◽  
Angela Harmon ◽  
J. J. Martin ◽  
J. J. Martin ◽  
M. T. Harris ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Bismuth Silicon Oxide ◽  
Phosphorus Doped

The low‐temperature photochromic response of bismuth silicon oxide

1993 ◽  
Vol 73 (3) ◽  
pp. 1443-1448 ◽  
Author(s):  
D. W. Hart ◽  
C. A. Hunt ◽  
D. D. Hunt ◽  
J. J. Martin ◽  
Meckie T. Harris ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Oxide ◽  
Bismuth Silicon Oxide

scholarly journals Low temperature silicon oxide deposition on polymer powders in a fluidized bed coupled to a cold remote plasma

2012 ◽  
Vol 206 (23) ◽  
pp. 4814-4821 ◽  
Author(s):  
H. Caquineau ◽  
L. Aiche ◽  
H. Vergnes ◽  
B. Despax ◽  
B. Caussat
Keyword(s):  
Low Temperature ◽  
Fluidized Bed ◽  
Silicon Oxide ◽  
Remote Plasma ◽  
Oxide Deposition ◽  
Polymer Powders

Mechanism of low temperature nitridation of silicon oxide layers by nitrogen plasma generated by low energy electron impact

1999 ◽  
Vol 85 (5) ◽  
pp. 2921-2928 ◽  
Author(s):  
Toshiko Mizokuro ◽  
Kenji Yoneda ◽  
Yoshihiro Todokoro ◽  
Hikaru Kobayashi
Keyword(s):  
Low Temperature ◽  
Electron Impact ◽  
Silicon Oxide ◽  
Nitrogen Plasma ◽  
Low Energy ◽  
Energy Electron ◽  
Oxide Layers ◽  
Low Energy Electron

Precursor design and engineering for low-temperature deposition of gate dielectrics for thin film transistors

2011 ◽  
Vol 1287 ◽  
Author(s):  
Anupama Mallikarjunan ◽  
Laura M Matz ◽  
Andrew D Johnson ◽  
Raymond N Vrtis ◽  
Manchao Xiao ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Moisture Absorption ◽  
Silicon Oxide ◽  
Chemical Vapor ◽  
Silicon Oxycarbide ◽  
Process Conditions ◽  
Structure Property ◽  
Oh Groups

ABSTRACTThe electrical and physical quality of gate and passivation dielectrics significantly impacts the device performance of thin film transistors (TFTs). The passivation dielectric also needs to act as a barrier to protect the TFT device. As low temperature TFT processing becomes a requirement for novel applications and plastic substrates, there is a need for materials innovation that enables high quality plasma enhanced chemical vapor deposition (PECVD) gate dielectric deposition. In this context, this paper discusses structure-property relationships and strategies for precursor development in silicon nitride, silicon oxycarbide (SiOC) and silicon oxide films. Experiments with passivation SiOC films demonstrate the benefit of a superior precursor (LkB-500) and standard process optimization to enable lower temperature depositions. For gate SiO2 deposition (that are used with polysilicon TFTs for example), organosilicon precursors containing different types and amounts of Si, C, O and H bonding were experimentally compared to the industry standard TEOS (tetraethoxysilane) at different process conditions and temperatures. Major differences were identified in film quality especially wet etch rate or WER (correlating to film density) and dielectric constant (k) values (correlating to moisture absorption). Gate quality SiO2 films can be deposited by choosing precursors that can minimize residual Si-OH groups and enable higher density stable moisture-free films. For e.g., the optimized precursor AP-LTO® 770 is clearly better than TEOS for low temperature PECVD depositions based on density, WER, k charge density (measured by flatband voltage or Vfb); and leakage and breakdown voltage (Vbd) measurements. The design and development of such novel precursors is a key factor to successfully enable manufacturing of advanced low temperature processed devices.

Bismuth silicon oxide as a holographic storage medium

1992 ◽  
Author(s):  
Charles L. Eads ◽  
Azad Siahmakoun ◽  
Arthur B. Western
Keyword(s):  
Silicon Oxide ◽  
Storage Medium ◽  
Holographic Storage ◽  
Bismuth Silicon Oxide

Three-wave and four-wave forward phase-conjugate imaging in photorefractive bismuth silicon oxide

1990 ◽  
Vol 15 (17) ◽  
pp. 935 ◽  
Author(s):  
D. C. Jones ◽  
S. F. Lyuksyutov ◽  
L. Solymar
Keyword(s):  
Silicon Oxide ◽  
Phase Conjugate ◽  
Bismuth Silicon Oxide
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