Spatially resolved atomic hydrogen concentrations and molecular hydrogen temperature profiles in the chemical‐vapor deposition of diamond

1995 ◽  
Vol 78 (6) ◽  
pp. 3622-3634 ◽  
Author(s):  
L. L. Connell ◽  
J. W. Fleming ◽  
H.‐N. Chu ◽  
D. J. Vestyck ◽  
E. Jensen ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Molecular Hydrogen ◽  
Chemical Vapor ◽  
Temperature Profiles ◽  
Spatially Resolved

scholarly journals Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

1991 ◽  
Vol 58 (6) ◽  
pp. 571-573 ◽  
Author(s):  
L. Schäfer ◽  
C.‐P. Klages ◽  
U. Meier ◽  
K. Kohse‐Höinghaus
Keyword(s):  
Chemical Vapor Deposition ◽  
Hydrogen Concentration ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Chemical Vapor ◽  
Concentration Profiles

Role of atomic hydrogen density and energy in low power chemical vapor deposition synthesis of diamond films

2005 ◽  
Vol 478 (1-2) ◽  
pp. 77-90 ◽  
Author(s):  
Randell Mills ◽  
Jayasree Sankar ◽  
Andreas Voigt ◽  
Jiliang He ◽  
Paresh Ray ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Power ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Hydrogen Density

T-Site-Trapped Molecular Hydrogen in a-Si:H

2000 ◽  
Vol 609 ◽  
Author(s):  
R. E. Norberg ◽  
D. J. Leopold ◽  
P. A. Fedders ◽  
R. Borzi ◽  
P. H. Chan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Molecular Hydrogen ◽  
Double Resonance ◽  
Chemical Vapor ◽  
Molecular Component ◽  
High Quality

ABSTRACTProton-29Si double resonance NMR measurements on high quality plasma-enhanced chemical vapor deposition a-Si:H deposited from SiH4 show that more than one third of the contained hydrogen is present as H2 molecules residing in the amorphous equivalent of T sites. The NMR signal from these trapped H2 appears in the narrow 4 kHz proton line, which arises from the less clustered hydrogen population. Very little of the molecular component is in the broad ~24 kHz line, which arises mostly from clustered hydrogen tightly bonded to silicon.

scholarly journals Spatially resolved pump-probe study of single-layer graphene produced by chemical vapor deposition [Invited]

2012 ◽  
Vol 2 (6) ◽  
pp. 708 ◽  
Author(s):  
Brian A. Ruzicka ◽  
Shuai Wang ◽  
Jianwei Liu ◽  
Kian-Ping Loh ◽  
Judy Z. Wu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Single Layer ◽  
Chemical Vapor ◽  
Single Layer Graphene ◽  
Pump Probe ◽  
Layer Graphene ◽  
Spatially Resolved

A Surface Inhibiting Effect in Chemical Vapor Deposition of Boron-Carbon Thin Films from Trimethylboron

2019 ◽  
Author(s):  
Laurent Souqui ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Competitive Adsorption ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Inhibiting Effect ◽  
Higher Temperature ◽  
Boron Carbon

We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.

A Surface Inhibiting Effect in Chemical Vapor Deposition of Boron-Carbon Thin Films from Trimethylboron

2019 ◽  
Author(s):  
Laurent Souqui ◽  
Hans Högberg ◽  
Henrik Pedersen
Keyword(s):  
Chemical Vapor Deposition ◽  
Partial Pressure ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Competitive Adsorption ◽  
Chemical Vapor ◽  
Carbon Films ◽  
Inhibiting Effect ◽  
Higher Temperature ◽  
Boron Carbon

We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.

Atomic-hydrogen mapping in hot-filament chemical-vapor deposition

2001 ◽  
Vol 40 (6) ◽  
pp. 765 ◽  
Author(s):  
Jussi Larjo ◽  
Heidi Koivikko ◽  
Daming Li ◽  
Rolf Hernberg
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atomic Hydrogen ◽  
Chemical Vapor ◽  
Hot Filament

A Spatially Resolved Study of Chemical Vapor Deposition of a-Si:H with Pure Thermal Excitation of Disilane

1991 ◽  
Vol 219 ◽  
Author(s):  
G. Amato ◽  
R. Spagnolo ◽  
F. Fizzotti ◽  
C. Manfredotti ◽  
P. Menna ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Ir Spectroscopy ◽  
Raman Scattering ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Excitation ◽  
Spatially Resolved ◽  
Pressure Chemical ◽  
Photothermal Deflection ◽  
Electronic And Structural Properties

ABSTRACTOptical, electronic and structural properties of a-Si:H samples grown by Low Pressure Chemical Vapor Deposition have been investigated by means of IR spectroscopy, Raman scattering and Photothermal Deflection Spectros-copy.Samples grown at different positions along the tube show very different properties that can be related to the amount of H and to the nature of the Si-H bonds.The most important parameters governing the thermally excited growth of a-Si:H are presented and discussed.

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