scholarly journals Atomic hydrogen concentration profiles at filaments used for chemical vapor deposition of diamond

1991 ◽  
Vol 58 (6) ◽  
pp. 571-573 ◽  
Author(s):  
L. Schäfer ◽  
C.‐P. Klages ◽  
U. Meier ◽  
K. Kohse‐Höinghaus
2005 ◽  
Vol 478 (1-2) ◽  
pp. 77-90 ◽  
Author(s):  
Randell Mills ◽  
Jayasree Sankar ◽  
Andreas Voigt ◽  
Jiliang He ◽  
Paresh Ray ◽  
...  

2007 ◽  
Vol 204 (9) ◽  
pp. 2860-2867 ◽  
Author(s):  
Sh. Michaelson ◽  
O. Ternyak ◽  
R. Akhvlediani ◽  
O. A. Williams ◽  
D. Gruen ◽  
...  

2019 ◽  
Author(s):  
Laurent Souqui ◽  
Hans Högberg ◽  
Henrik Pedersen

We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.


2019 ◽  
Author(s):  
Laurent Souqui ◽  
Hans Högberg ◽  
Henrik Pedersen

We use the ability to control the surface chemistry in chemical vapor deposition (CVD) to deposit boron-carbon films into pores with aspects ratios of 60:1 without clogging the opening and into lateral trenches with ratios up to 2000:1. In contrast to many other surface-controlled CVD processes, operating at low temperatures (100-250 °C) and pressures (10-1000 Pa), we use trimethylboron at higher temperature (700 °C) and pressure (5000 Pa) affording a surface inhibited CVD process in hydrogen ambient. We show that the deposition rate is highly dependent on the partial pressure of hydrogen; decreasing proportionally to the logarithm of the partial pressure. The surface-controlled effect is not encountered in argon ambient. We propose that this is explained by a competitive adsorption of growth species and inhibiting dihydrogen or atomic hydrogen species following a Temkin isotherm.


2001 ◽  
Vol 40 (6) ◽  
pp. 765 ◽  
Author(s):  
Jussi Larjo ◽  
Heidi Koivikko ◽  
Daming Li ◽  
Rolf Hernberg

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