A Spatially Resolved Study of Chemical Vapor Deposition of a-Si:H with Pure Thermal Excitation of Disilane

ABSTRACTOptical, electronic and structural properties of a-Si:H samples grown by Low Pressure Chemical Vapor Deposition have been investigated by means of IR spectroscopy, Raman scattering and Photothermal Deflection Spectros-copy.Samples grown at different positions along the tube show very different properties that can be related to the amount of H and to the nature of the Si-H bonds.The most important parameters governing the thermally excited growth of a-Si:H are presented and discussed.