An artificial nonradiative recombination center model created by use of a Si1−xGex/Si quantum-well-inserted pseudomorphic superlattice

2012 ◽  
Vol 520 (8) ◽  
pp. 3365-3368
Author(s):  
Yosuke Terada ◽  
Yuhsuke Yasutake ◽  
Susumu Fukatsu
Keyword(s):  
Quantum Well ◽  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

1.54μm luminescence of β-FeSi2 grown on Au-coated Si substrates

2012 ◽  
Vol 1396 ◽  
Author(s):  
Kensuke Akiyama ◽  
Hiroshi Funakubo ◽  
Masaru Itakura
Keyword(s):  
Temperature Dependence ◽  
Radiative Recombination ◽  
Recombination Center ◽  
Quality Level ◽  
Nonradiative Recombination ◽  
Si Substrate ◽  
High Quality ◽  
Nonradiative Recombination Center ◽  
Si Substrates ◽  
Photoluminescence Peak

ABSTRACTA clear PL spectrum was observed from β-FeSi2 grains on gold (Au)-coated (100)Si substrates, and indicated the formation of crystal with the same high quality level as the β-FeSi2 on a copper (Cu)-coated Si substrate. Moreover, the temperature dependence of photoluminescence peak intensities showed lower density of the nonradiative recombination center in β-FeSi2 grains on Au-coated Si substrates than that of β-FeSi2 film on Cu-coated Si. Au was not detected in β-FeSi2 grains by STEM-EDX observation, while Cu was observed in the grains and grain boundaries of β-FeSi2 and rolled as non-radiative recombination center.

Calcium as a nonradiative recombination center in InGaN

2017 ◽  
Vol 10 (2) ◽  
pp. 021001 ◽  
Author(s):  
Jimmy-Xuan Shen ◽  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Audrius Alkauskas ◽  
Erin Young ◽  
...  
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Identification of a nonradiative recombination center in GaAs

1992 ◽  
Vol 72 (9) ◽  
pp. 4449-4451 ◽  
Author(s):  
P. Michler ◽  
A. Hangleiter ◽  
R. Dieter ◽  
F. Scholz
Keyword(s):  
Recombination Center ◽  
Nonradiative Recombination ◽  
Nonradiative Recombination Center

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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