Hot‐electron‐induced electroluminescence and avalanche multiplication in hydrogenated amorphous silicon

1995 ◽  
Vol 77 (12) ◽  
pp. 6354-6357 ◽  
Author(s):  
Toshihiko Toyama ◽  
Kazuhiro Hiratsuka ◽  
Hiroaki Okamoto ◽  
Yoshihiro Hamakawa
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Electron ◽  
Avalanche Multiplication ◽  
Hydrogenated Amorphous

Hot-electron degradation in hydrogenated amorphous-silicon-nitride thin-film diodes

2001 ◽  
Vol 89 (10) ◽  
pp. 5491-5496 ◽  
Author(s):  
G. Oversluizen ◽  
V. Zieren ◽  
M. T. Johnson ◽  
A. A. van der Put ◽  
W. H. M. Lodders
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Electron ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous

Hot-electron Phototransistors in Hydrogenated Amorphous Silicon

2000 ◽  
Vol 609 ◽  
Author(s):  
J. M. Shannon ◽  
E. G. Gerstner
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Electron ◽  
Large Area ◽  
Device Structure ◽  
Thin Chromium ◽  
High Potential Barrier ◽  
Simple Technology ◽  
Hydrogenated Amorphous ◽  
Hot Electron Transistor

ABSTRACTIt has been shown that useful current gains can be obtained in hot-electron device structures containing very thin chromium disilicide layers of nanometer dimensions in hydrogenated amorphous silicon [1]. The a-Si:H/a-CrSi2/a-Si:H device structure made using PECVD and sputtering techniques naturally forms a hot-electron transistor device where the electrons are emitted across a high potential barrier on one side of the silicide and are collected over a low barrier on the other. Recent results [2] have shown that current gains can be in excess of 40 in structures having a-CrSi2 bases ∼1 nm thick.Here we outline the relatively simple technology used to make these devices and examine their performance as phototransistors in which the photo-current is amplified by hot-electron transistor action. The speed of response can be maximised by operating the phototransistor with high electric field across the collector since it is the transit time of the photo-induced carriers that determines the response time. We show that these devices provide a useful new active element for large area amorphous silicon electronics.

High-Field Electron Transport and Hot Electron Phenomena in Hydrogenated Amorphous Silicon Films

1994 ◽  
Vol 33 (Part 1, No. 10) ◽  
pp. 5640-5646 ◽  
Author(s):  
Jun-ichi Nakata ◽  
Shigeki Nakajima ◽  
Shozo Imao ◽  
Yoshio Inuishi
Keyword(s):  
Electron Transport ◽  
Amorphous Silicon ◽  
High Field ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Films ◽  
Hot Electron ◽  
Field Electron ◽  
Hydrogenated Amorphous

Temperature Dependence of Hot-Electron-Induced Electroluminescence from Hydrogenated Amorphous Silicon

1998 ◽  
Vol 37 (Part 1, No. 5A) ◽  
pp. 2474-2475
Author(s):  
Isamu Yashima ◽  
Hiroshi Watanave ◽  
Takayasu Ogisu ◽  
Ryouma Tsukuda ◽  
Susumu Sato
Keyword(s):  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hot Electron ◽  
Hydrogenated Amorphous

BONDING IN HYDROGENATED AMORPHOUS SILICON

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-773-C4-777 ◽  
Author(s):  
H. R. Shanks ◽  
F. R. Jeffrey ◽  
M. E. Lowry
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Hydrogenated Amorphous

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

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