Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer

Yung-Hsien Wu; Min-Lin Wu; Rong-Jhe Lyu; Jia-Rong Wu; Lun-Lun Chen; Chia-Chun Lin

doi:10.1063/1.3590923

Crystalline ZrO2-gated Ge metal-oxide-semiconductor capacitors fabricated on Si substrate with Y2O3 as passivation layer

Applied Physics Letters ◽

10.1063/1.3590923 ◽

2011 ◽

Vol 98 (20) ◽

pp. 203502 ◽

Cited By ~ 17

Author(s):

Yung-Hsien Wu ◽

Min-Lin Wu ◽

Rong-Jhe Lyu ◽

Jia-Rong Wu ◽

Lun-Lun Chen ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Si Substrate

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Cited By ~ 4

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Cited By ~ 12

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Thermal gate SiO2 for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

Applied Physics Letters ◽

10.1063/1.2776352 ◽

2007 ◽

Vol 91 (9) ◽

pp. 093503 ◽

Cited By ~ 11

Author(s):

Yung-Hsien Wu ◽

Jia-Rong Wu ◽

Min-Lin Wu

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrate

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Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Solid State Communications ◽

10.1016/j.ssc.2011.09.033 ◽

2011 ◽

Vol 151 (24) ◽

pp. 1881-1884 ◽

Cited By ~ 25

Author(s):

Souvik Kundu ◽

T. Shripathi ◽

P. Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Engineering ◽

Interface Passivation

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Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Cited By ~ 12

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Ge-stabilized tetragonal ZrO2 as gate dielectric for Ge metal-oxide-semiconductor capacitors fabricated on Si substrate

Applied Physics Letters ◽

10.1063/1.3455904 ◽

2010 ◽

Vol 97 (4) ◽

pp. 043503 ◽

Cited By ~ 18

Author(s):

Yung-Hsien Wu ◽

Min-Lin Wu ◽

Jia-Rong Wu ◽

Lun-Lun Chen

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Tetragonal Zro2 ◽

Si Substrate

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A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

Applied Physics Letters ◽

10.1063/1.3068752 ◽

2009 ◽

Vol 94 (1) ◽

pp. 013511 ◽

Cited By ~ 13

Author(s):

Feng Zhu ◽

Han Zhao ◽

I. Ok ◽

H. S. Kim ◽

J. Yum ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Interface Passivation ◽

Silicon Interface

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Cited By ~ 4

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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A study of metal-oxide-semiconductor capacitors on GaAs, In0.53Ga0.47As, InAs, and InSb substrates using a germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2972107 ◽

2008 ◽

Vol 93 (6) ◽

pp. 062111 ◽

Cited By ~ 27

Author(s):

Hyoung-Sub Kim ◽

I. Ok ◽

M. Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Gate oxide scaling down in HfO2–GaAs metal-oxide-semiconductor capacitor using germanium interfacial passivation layer

Applied Physics Letters ◽

10.1063/1.2762291 ◽

2007 ◽

Vol 91 (4) ◽

pp. 042904 ◽

Cited By ~ 28

Author(s):

Hyoung-Sub Kim ◽

Injo Ok ◽

Manhong Zhang ◽

F. Zhu ◽

S. Park ◽

...

Keyword(s):

Metal Oxide ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Scaling Down ◽

Metal Oxide Semiconductor Capacitor

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