Deposition of epitaxially oriented films of cubic silicon carbide on silicon by laser ablation: Microstructure of the silicon–silicon‐ carbide interface

1995 ◽  
Vol 77 (12) ◽  
pp. 6601-6608 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
A. Samman ◽  
...  
1994 ◽  
Vol 339 ◽  
Author(s):  
L. Rimai ◽  
R. Ager ◽  
W. H. Weber ◽  
J. Hangas ◽  
B. D. Poindexter

ABSTRACTSilicon carbide films are grown epitaxially on crystalline silicon substrates heated above 1000 °C, by laser ablation of pure carbon targets to thicknesses between 300 and 400 nm. These films grow on top of the silicon substrate from the carbon in the ablation plume and from the silicon of the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 μm with part of the silicon being supplied by the ablation plume of the silicon target.


2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peter A. Schultz ◽  
Renee M. Van Ginhoven ◽  
Arthur H. Edwards

2020 ◽  
Vol 22 (4) ◽  
pp. 1901173
Author(s):  
Tuan‐Khoa Nguyen ◽  
Hoang-Phuong Phan ◽  
Karen M. Dowling ◽  
Ananth Saran Yalamarthy ◽  
Toan Dinh ◽  
...  

1996 ◽  
Vol 16 (7) ◽  
pp. 703-712 ◽  
Author(s):  
E. Scafè ◽  
G. Giunta ◽  
L. Fabbri ◽  
L. Di Rese ◽  
G. De Portu ◽  
...  

2021 ◽  
Vol 104 (11) ◽  
Author(s):  
Chen Lu ◽  
Meng-meng Gao ◽  
Ting-ting Hu ◽  
Zhi-zhan Chen

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