Polarized X-ray Absorption Spectroscopy Observation of Electronic and Structural Changes of Chemical Vapor Deposition Graphene in Contact with Water

2014 ◽  
Vol 118 (44) ◽  
pp. 25456-25459 ◽  
Author(s):  
J. J. Velasco-Velez ◽  
C. H. Wu ◽  
B. Y. Wang ◽  
Y. Sun ◽  
Y. Zhang ◽  
...  
2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Yingda Qian ◽  
Yuanlan Liang ◽  
Xuguang Luo ◽  
Kaiyan He ◽  
Wenhong Sun ◽  
...  

A series of ultrathin InSb films grown on GaAs by low-pressure metalorganic chemical vapor deposition with different V/III ratios were investigated thoroughly using spectroscopic ellipsometry (SE), X-ray diffraction, and synchrotron radiation X-ray absorption spectroscopy. The results predicted that InSb films on GaAs grown under too high or too low V/III ratios are with poor quality, while those grown with proper V/III ratios of 4.20–4.78 possess the high crystalline quality. The temperature-dependent SE (20–300°C) and simulation showed smooth variations of SE spectra, optical constants (n, k, e1, and ε2), and critical energy points (E1, E1+Δ1, E′0, E2, and E′1) for InSb film when temperature increased from 20°C to 250°C, while at 300°C, large changes appeared. Our study revealed the oxidation of about two atomic layers and the formation of an indium-oxide (InO) layer of ∼5.4 nm. This indicates the high temperature limitation for the use of InSb/GaAs materials, up to 250°C.


1995 ◽  
Vol 77 (2) ◽  
pp. 591-597 ◽  
Author(s):  
A. Caballero ◽  
D. Leinen ◽  
A. Fernández ◽  
A. Justo ◽  
J. P. Espinós ◽  
...  

2020 ◽  
Vol 59 (7) ◽  
pp. 070909
Author(s):  
Noritake Isomura ◽  
Tatsuji Nagaoka ◽  
Yukihiko Watanabe ◽  
Katsuhiro Kutsuki ◽  
Hiroyuki Nishinaka ◽  
...  

2003 ◽  
Vol 372 (3-4) ◽  
pp. 320-324 ◽  
Author(s):  
Y.H Tang ◽  
X.T Zhou ◽  
Y.F Hu ◽  
C.S Lee ◽  
S.T Lee ◽  
...  

2011 ◽  
Vol 306-307 ◽  
pp. 167-170
Author(s):  
Yu Li Tu ◽  
Yan Hao Huang ◽  
Ling Min Kong ◽  
Kung Yen Lee ◽  
Ling Yun Jang ◽  
...  

Synchrotron radiation extended X-ray absorption fine structure and Raman scattering were used to characterize a series of 3C-SiC films grown on Si (100) by chemical vapor deposition. EXAFS can probe the physical and chemical structure of matters at an atomic scale and Raman parameters such as intensity, width, peak frequency and polarization provide fruitful information on the crystal quality and properties of these film materials.


1989 ◽  
Vol 55 (10) ◽  
pp. 957-959 ◽  
Author(s):  
T. W. Capehart ◽  
T. A. Perry ◽  
C. B. Beetz ◽  
D. N. Belton ◽  
G. B. Fisher ◽  
...  

1991 ◽  
Vol 9 (3) ◽  
pp. 1140-1144 ◽  
Author(s):  
X.‐Q. Yang ◽  
M. W. Ruckman ◽  
T. A. Skotheim ◽  
M. den Boer ◽  
Yu Zheng ◽  
...  

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