Electrical characteristics and thermal stability of ohmic contacts top‐type In0.47Ga0.53/As/InP

1995 ◽  
Vol 77 (8) ◽  
pp. 3908-3912 ◽  
Author(s):  
Patrick W. Leech ◽  
Geoffrey K. Reeves
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Electrical Characteristics ◽  
Thermal Stability Of

Thermal Stability of Ohmic Contacts to n-InxGa1−xN

1995 ◽  
Vol 395 ◽  
Author(s):  
A. Duibha ◽  
S. J. Pearton ◽  
C. R. Abernathy ◽  
J. W. Lee ◽  
P. H. Holloway ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Ohmic Contacts ◽  
Electrical Characteristics ◽  
Microstructural Properties ◽  
Excellent Thermal Stability ◽  
Annealing Temperatures ◽  
Specific Contact ◽  
Specific Contact Resistivity ◽  
Thermal Stability Of

ABSTRACTThe microstructural properties and interdiffusion reactions of Au/Ge/Ni, Ti/Pt/Au, WSix and AuBe contacts on GaN and In0.5Ga0.5N have been examined using Scanning Electron Microscopy and Auger Electron Spectroscopy. The WSix contacts possess excellent thermal stability and retained good structural properties at annealing temperatures as high as 800°C on GaN. The electrical characteristics of WSix contacts on In0.5Ga0.5N had a specific contact resistivity of 1.48×10−5Ωcm2 and an excellent surface morphology following annealing at 700°C. The increase in contact resistance observed at higher temperatures was attributed to intermixing of metal and semiconductor. In contrast the Ti/Pt/Au and Au/Ge/Ni contacts were stable only to ≤ 500°C. AuBe contacts had the poorest thermal stability, with substantial reaction with GaN occurring even at 400°C. The WSix contact appears to be an excellent choice for high temperature GaN electronics applications.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

scholarly journals Thermal stability of low-resistance Au Ohmic contacts to GeTe

2017 ◽  
Vol 621 ◽  
pp. 145-150 ◽  
Author(s):  
Haila M. Aldosari ◽  
Kayla A. Cooley ◽  
Shih-Ying Yu ◽  
Katherine C. Kragh-Buetow ◽  
Suzanne E. Mohney
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
Low Resistance ◽  
Thermal Stability Of

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Structural Processes in Gold-Based Metallization During the Formation of Ohmic Contacts to GaSb

1995 ◽  
Vol 403 ◽  
Author(s):  
A. Piotrowska ◽  
E. Kańifiska ◽  
M. Guziewicz ◽  
E. Mizera ◽  
E. Dynowska ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Contact System ◽  
Contact Reaction ◽  
Annealing Behavior ◽  
Thermally Activated ◽  
Combined Use ◽  
Semiconductor System ◽  
Thermal Stability Of

AbstractAnnealing behavior of Au, AuZn, and AuSb metallization on GaSb have been investigated by the combined use of RBS, XRD, TEM, and I-V characterization. The results give evidence that the thermally activated contact reaction strongly depends on the particular elements incorporated in the Au layer. Pure Au reacts with GaSb at 100°C. The addition of Zn to Au metallization increases the thermal stability of the metallization/semiconductor system to 200°C. Antimony, forming with gold the AuSb2 phase in metallization, provides the most stable ohmic contact system.

Effects of Mg on the electrical characteristics and thermal stability of MgxZn1−xO thin film transistors

2011 ◽  
Vol 98 (12) ◽  
pp. 123511 ◽  
Author(s):  
Chieh-Jen Ku ◽  
Ziqing Duan ◽  
Pavel I. Reyes ◽  
Yicheng Lu ◽  
Yi Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermal Stability ◽  
Thin Film Transistors ◽  
Electrical Characteristics ◽  
Thermal Stability Of

Electrical Characteristics and Thermal Stability of Pt/HfO 2 /Si Metal-Insulatror-Semiconductror Capacitors

2002 ◽  
Vol 48 (1) ◽  
pp. 13-21 ◽  
Author(s):  
Kyu-Jeong Choi ◽  
Woong-Chul Shin ◽  
Jong-Bong Park ◽  
Soon-Gil Yoon
Keyword(s):  
Thermal Stability ◽  
Electrical Characteristics ◽  
Thermal Stability Of
Sign in / Sign up

Export Citation Format

Share Document