Evolution and ripening of Ge crystals grown by nanoscale induced lateral epitaxy on localized oxide

2011 ◽  
Vol 109 (10) ◽  
pp. 103516
Author(s):  
V. Yam ◽  
V. D. Cammilleri ◽  
F. Fossard ◽  
C. Renard ◽  
L. Vincent ◽  
...  
Keyword(s):  
Lateral Epitaxy

Subboundary Free Submicronic Devices on Laser-Recrystallized Silicon Oninsulator

1984 ◽  
Vol 35 ◽  
Author(s):  
A.J. Auberton-Herve ◽  
J.P. Joly ◽  
J.M. Hode ◽  
J.C. Castagna
Keyword(s):  
Channel Length ◽  
Silicon On Insulator ◽  
Ring Oscillator ◽  
Mos Transistors ◽  
Seed Structure ◽  
Leakage Currents ◽  
Industrial Processing ◽  
Laser Recrystallization ◽  
Dynamic Performances ◽  
Lateral Epitaxy

ABSTRACTSeeding from bulk silicon (lateral epitaxy) has been used in Ar+ laser recrystallization to achieve subboundary free silicon on insulator areas. On these areas C.MOS devices have been performed using almost entirely the standard processing steps of a bulk micronic C-MOS technology. n -MOS transistors with channel length as small as 0.3 um have shown very small leakage currents. This is attributed especially to the lack of subboundaries. A 40 % increase in the dynamic performances in comparison with equivalent size C-MOS bulk devices has been obtained (93 ps of delay time per stage for a 101 stages ring oscillator with 0.8 μm of channel length). This is the best result presented so far on recrystallized SOI. No special requirements are needed in the lay out of the circuit with the chosen seed structure. Furthermore an industrial processing rate for the laser recrystallization processing has been achieved using an elliptical laser beam, a high scan velocity (30 cm/s) and a 100 μm line to line scan step (a 4' wafer in 4 minutes).

High Power SiC MESFETs

2006 ◽  
Vol 911 ◽  
Author(s):  
Christopher Harris ◽  
Andrei O Konstantinov ◽  
Jan-Olov Svedberg ◽  
Ian Ray ◽  
Christer Hallin
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Total Power ◽  
Short Channel ◽  
Class Ab ◽  
Channel Effects ◽  
Cell Components ◽  
Lateral Epitaxy ◽  
P Type ◽  
Rf Signal

AbstractThe development of high power, high efficiency silicon carbide RF MESFETs is reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 25W. The devices have been fabricated using a novel lateral epitaxy technique. The MESFET employs a buried p-type depletion stopper in order to suppress short channel effects and increase the operation voltage. The use of the depletion stopper also allows high RF signal gain, while maintaining high voltage operation capability. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and a high unilateral gain.Packaged 6-mm RF transistors have been evaluated using amplifier circuits designed for operation in classes A, AB or C. Operation in class AB demonstrated a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

scholarly journals InAs Planar Nanowire Gate-All-Around MOSFETs on GaAs Substrates by Selective Lateral Epitaxy

2015 ◽  
Vol 36 (7) ◽  
pp. 663-665 ◽  
Author(s):  
Chen Zhang ◽  
Wonsik Choi ◽  
Parsian K. Mohseni ◽  
Xiuling Li
Keyword(s):  
Gaas Substrates ◽  
Lateral Epitaxy

scholarly journals Lateral Epitaxy of Atomically Sharp WSe2/WS2 Heterojunctions on Silicon Dioxide Substrates

2016 ◽  
Vol 28 (20) ◽  
pp. 7194-7197 ◽  
Author(s):  
Jianyi Chen ◽  
Wu Zhou ◽  
Wei Tang ◽  
Bingbing Tian ◽  
Xiaoxu Zhao ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Lateral Epitaxy

Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

1997 ◽  
Vol 482 ◽  
Author(s):  
O. H. Nam ◽  
T. S. Zheleva ◽  
M. D. Bremser ◽  
D. B. Thomson ◽  
R. F. Davis
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Complex Function ◽  
Threading Dislocations ◽  
Organometallic Vapor Phase Epitaxy ◽  
Microstructural Characteristics ◽  
Lateral Epitaxial Overgrowth ◽  
Density Of Dislocations ◽  
Lateral Overgrowth ◽  
Lateral Epitaxy

AbstractLateral epitaxial overgrowth (LEO) of GaN layers has been achieved on 3 μm wide and 7 μm spaced stripe windows contained in SiO2 masks on GaN/AIN/6H-SiC(0001) substrates via organometallic vapor phase epitaxy (OMVPE). The extent and microstructural characteristics of lateral overgrowth were a complex function of stripe orientation, growth temperature and triethylgallium (TEG) flow rate. A high density of threading dislocations, originating from the interface of the underlying GaN with the AIN buffer layer, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The second lateral epitaxial overgrowth layers were obtained on the first laterally grown layers by the repetition of SiO2 deposition, lithography and lateral epitaxy.

Lateral Epitaxy of Si Films Deposited in a UHV Ambient by Electron Beam Annealing

1983 ◽  
Author(s):  
Tomoyasu Inoue ◽  
Kenji Shibata ◽  
Koichi Kato ◽  
Yuichi Mikata ◽  
Masahiro Kashiwagi
Keyword(s):  
Electron Beam ◽  
Lateral Epitaxy ◽  
Si Films

scholarly journals Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

1997 ◽  
Vol 71 (18) ◽  
pp. 2638-2640 ◽  
Author(s):  
Ok-Hyun Nam ◽  
Michael D. Bremser ◽  
Tsvetanka S. Zheleva ◽  
Robert F. Davis
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Lateral Epitaxy

A Study of Melting and Resolidification of Silicon-on-Insulator Structures Formed by Lateral Epitaxy

1985 ◽  
Vol 53 ◽  
Author(s):  
D A Williams ◽  
R A Mcmahon ◽  
D G Hasko ◽  
H Ahmed ◽  
G F Hopper ◽  
...  
Keyword(s):  
Cross Sections ◽  
Silicon On Insulator ◽  
One Dimensional ◽  
Wide Range ◽  
Background Temperature ◽  
Lateral Epitaxy ◽  
Polycrystalline Silicon Films ◽  
Beam Technique ◽  
Sweep Speed

ABSTRACTThe formation of silicon-on-insulator structures, by recrystallising polycrystalline silicon films with a dual electron beam technique, has been studied over a wide range of conditions. The quality of the layers has been assessed by examining cross-sections in the SEM and optical microscopy of the surface after a Secco etch. The range of line powers which gives device-worthy single crystal material becomes greater as the sweep speed increases and as the background temperature is reduced. The extent of melting into the substrate in the seed windows and below the isolating oxide was determined from the movement of an arsenic implant. The experimental results are compared to the predictions from a one dimensional model for the heat flow.

Lateral epitaxy overgrowth of GaN with NH3 flow rate modulation

2000 ◽  
Vol 77 (10) ◽  
pp. 1496-1498 ◽  
Author(s):  
X. Zhang ◽  
P. D. Dapkus ◽  
D. H. Rich
Keyword(s):  
Flow Rate ◽  
Rate Modulation ◽  
Lateral Epitaxy
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