scholarly journals Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy

1997 ◽  
Vol 71 (18) ◽  
pp. 2638-2640 ◽  
Author(s):  
Ok-Hyun Nam ◽  
Michael D. Bremser ◽  
Tsvetanka S. Zheleva ◽  
Robert F. Davis
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Vapor Phase Epitaxy ◽  
Organometallic Vapor Phase Epitaxy ◽  
Lateral Epitaxy

Organometallic Vapor Phase Lateral Epitaxy of Low Defect Density GaN Layers

1997 ◽  
Vol 482 ◽  
Author(s):  
O. H. Nam ◽  
T. S. Zheleva ◽  
M. D. Bremser ◽  
D. B. Thomson ◽  
R. F. Davis
Keyword(s):  
Vapor Phase ◽  
Defect Density ◽  
Complex Function ◽  
Threading Dislocations ◽  
Organometallic Vapor Phase Epitaxy ◽  
Microstructural Characteristics ◽  
Lateral Epitaxial Overgrowth ◽  
Density Of Dislocations ◽  
Lateral Overgrowth ◽  
Lateral Epitaxy

AbstractLateral epitaxial overgrowth (LEO) of GaN layers has been achieved on 3 μm wide and 7 μm spaced stripe windows contained in SiO2 masks on GaN/AIN/6H-SiC(0001) substrates via organometallic vapor phase epitaxy (OMVPE). The extent and microstructural characteristics of lateral overgrowth were a complex function of stripe orientation, growth temperature and triethylgallium (TEG) flow rate. A high density of threading dislocations, originating from the interface of the underlying GaN with the AIN buffer layer, were contained in the GaN grown in the window regions. The overgrowth regions, by contrast, contained a very low density of dislocations. The second lateral epitaxial overgrowth layers were obtained on the first laterally grown layers by the repetition of SiO2 deposition, lithography and lateral epitaxy.

Effects of column III alkyl sources on deep levels in GaN grown by organometallic vapor phase epitaxy

1995 ◽  
Vol 67 (12) ◽  
pp. 1721-1723 ◽  
Author(s):  
W. I. Lee ◽  
T. C. Huang ◽  
J. D. Guo ◽  
M. S. Feng
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Deep Levels ◽  
Organometallic Vapor Phase Epitaxy

Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation

2013 ◽  
Vol 52 (11R) ◽  
pp. 110201 ◽  
Author(s):  
Alexander Vodopyanov ◽  
Yurii Buzynin ◽  
Dmitry Mansfeld ◽  
Oleg Khrykin ◽  
Yurii Drozdov ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Nitrogen Plasma ◽  
Vapor Phase Epitaxy ◽  
High Rate ◽  
Organometallic Vapor Phase Epitaxy ◽  
Plasma Activation
Sign in / Sign up

Export Citation Format

Share Document