GaAs heteroepitaxial growth on vicinal Si(110) substrates by molecular beam epitaxy

1994 ◽  
Vol 76 (11) ◽  
pp. 7630-7632 ◽  
Author(s):  
T. Yodo ◽  
M. Tamura ◽  
M. López ◽  
Y. Kajikawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth

Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy

1988 ◽  
Vol 53 (22) ◽  
pp. 2179-2181 ◽  
Author(s):  
G. L. Zhou ◽  
K. M. Chen ◽  
W. D. Jiang ◽  
C. Sheng ◽  
X. J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Si Substrates

An intermediate (1.0–1.5 monolayers) stage of heteroepitaxial growth of InAs on GaAs(100) during submonolayer molecular beam epitaxy

1996 ◽  
Vol 352-354 ◽  
pp. 646-650 ◽  
Author(s):  
G.M. Guryanov ◽  
G.E. Cirlin ◽  
A.O. Golubok ◽  
S.Ya. Tipissev ◽  
N.N. Ledentsov ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth

Influence of Off-Oriented Substrates on Heteroepitaxial Growth of (Ca, Sr)F2 Layers on Si (100)

1989 ◽  
Vol 160 ◽  
Author(s):  
Tetsuroh Minemura ◽  
Junko Asano ◽  
Kazuo Tsutsui ◽  
Seijiro Furukawa
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Considerable Influence ◽  
Heteroepitaxial Growth ◽  
Remarkable Effect

AbstractHeteroepitaxial growth of CaxSr1-xF2 layers on Si (100) substrates by molecular beam epitaxy has been investigated for GaAs / fluoride / Si structures. The Si (100) substrates off-oriented toward [011] show no considerable influence on crystallinity of CaF2 and SrF2 epitaxial layers. The off - oriented substrates, however, influence a remarkable effect on CaxSr1-xF2 layers, resulting in poor crystallinity rather than good one. This influence of off-oriented Si (100) substrates on the heteroepitaxy of CaxSr1-xF2 layers was the opposite of that found in GaAs/Si (100) structures.

Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

1988 ◽  
Vol 53 (13) ◽  
pp. 1189-1191 ◽  
Author(s):  
G. M. Williams ◽  
C. R. Whitehouse ◽  
C. F. McConville ◽  
A. G. Cullis ◽  
T. Ashley ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Heteroepitaxial Growth

Low-temperature heteroepitaxial growth of Si on Sapphire by disilane gas-source molecular beam epitaxy

1989 ◽  
Vol 97 (3-4) ◽  
pp. 587-590 ◽  
Author(s):  
Kazuaki Sawada ◽  
Makoto Ishida ◽  
Kiyoteru Hayama ◽  
Tetsuro Nakamura ◽  
Tetso Suzaki
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Heteroepitaxial Growth ◽  
Gas Source
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