Effect of tunneling electrons in Fowler–Nordheim regime on the current‐voltage characteristics and model of degradation of metal‐oxide‐semiconductor capacitors

Simon Elrharbi; Marc Jourdain; Anne Meinertzhagen

doi:10.1063/1.357888

Effect of tunneling electrons in Fowler–Nordheim regime on the current‐voltage characteristics and model of degradation of metal‐oxide‐semiconductor capacitors

Journal of Applied Physics ◽

10.1063/1.357888 ◽

1994 ◽

Vol 76 (2) ◽

pp. 1013-1020 ◽

Cited By ~ 15

Author(s):

Simon Elrharbi ◽

Marc Jourdain ◽

Anne Meinertzhagen

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.l978 ◽

1995 ◽

Vol 34 (Part 2, No. 8A) ◽

pp. L978-L980

Author(s):

Chii-Wen Chen ◽

Yean-Kuen Fang ◽

Gun-Yuan Lee ◽

Jang-Cheng Hsieh ◽

MongSongLiang ◽

...

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistors ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Threshold Voltage Shift ◽

Current Voltage ◽

Current Voltage Characteristics

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Effective channel length measurement of metal-oxide-semiconductor transistors with pocket implant using the subthreshold current-voltage characteristics based on remote Coulomb scattering

Applied Physics Letters ◽

10.1063/1.2093943 ◽

2005 ◽

Vol 87 (15) ◽

pp. 153510 ◽

Cited By ~ 11

Author(s):

C. W. Eng ◽

W. S. Lau ◽

D. Vigar ◽

S. S. Tan ◽

L. Chan

Keyword(s):

Metal Oxide ◽

Channel Length ◽

Metal Oxide Semiconductor ◽

Length Measurement ◽

Oxide Semiconductor ◽

Coulomb Scattering ◽

Subthreshold Current ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Effective Channel

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Anomalous effects on the current‐voltage characteristics ofp‐channel metal‐oxide‐semiconductor transistors in the temperature range 4.2–50 K

Journal of Applied Physics ◽

10.1063/1.346579 ◽

1990 ◽

Vol 68 (4) ◽

pp. 1896-1901 ◽

Cited By ~ 40

Author(s):

A. G. Nassiopoulos ◽

D. Tsamakis ◽

E. Rocofyllou

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Temperature Range ◽

Current Voltage ◽

Current Voltage Characteristics

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Sodium-peak splitting in dynamic current-voltage characteristics of convective ion currents in metal-oxide-semiconductor structures

Semiconductors ◽

10.1134/s1063782608010065 ◽

2008 ◽

Vol 42 (1) ◽

pp. 43-51 ◽

Cited By ~ 4

Author(s):

S. G. Dmitriev ◽

Yu. V. Markin

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ion Currents ◽

Peak Splitting ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Separation of dynamic current-voltage characteristics (DCVCs) of an oxide film from the DCVC of ionic currents in a metal/oxide/semiconductor structure: Universal quasi-static DCVCs of a film

Journal of Communications Technology and Electronics ◽

10.1134/s106422690602001x ◽

2006 ◽

Vol 51 (2) ◽

pp. 123-140 ◽

Cited By ~ 3

Author(s):

S. G. Dmitriev ◽

Yu. V. Markin ◽

V. E. Sizov

Keyword(s):

Oxide Film ◽

Metal Oxide ◽

Ionic Currents ◽

Metal Oxide Semiconductor ◽

Semiconductor Structure ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics ◽

Metal Oxide Semiconductor Structure

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Wave function penetration effects on current–voltage characteristics of ballistic metal–oxide–semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.1519957 ◽

2003 ◽

Vol 93 (1) ◽

pp. 600-604 ◽

Cited By ~ 5

Author(s):

M. Yunus ◽

A. Haque

Keyword(s):

Wave Function ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Slow response in gate current–voltage characteristics of metal–oxide–semiconductor structures on the 4H-SiC$(000\bar{1})$ face

Japanese Journal of Applied Physics ◽

10.7567/jjap.55.054103 ◽

2016 ◽

Vol 55 (5) ◽

pp. 054103 ◽

Cited By ~ 5

Author(s):

Naoki Kumagai ◽

Hiroshi Kimura ◽

Yasuhiko Onishi ◽

Mitsuo Okamoto ◽

Kenji Fukuda

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Slow Response ◽

Gate Current ◽

Semiconductor Structures ◽

Current Voltage ◽

Current Voltage Characteristics

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Influence of the oxide charge build-up during Fowler-Nordheim stress on the current-voltage characteristics of metal-oxide-semiconductor capacitors

Journal of Non-Crystalline Solids ◽

10.1016/0022-3093(95)00133-6 ◽

1995 ◽

Vol 187 ◽

pp. 175-180 ◽

Cited By ~ 3

Author(s):

Simon Elrharbi ◽

Marc Jourdain

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Charge ◽

Current Voltage ◽

Current Voltage Characteristics

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An investigation of anomalous current‐voltage characteristics in silicon‐on‐insulator metal‐oxide‐semiconductor transistors

Journal of Applied Physics ◽

10.1063/1.354899 ◽

1993 ◽

Vol 74 (2) ◽

pp. 1410-1416 ◽

Cited By ~ 4

Author(s):

Patrick S. Liu ◽

George T. Liu

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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Current-Voltage Characteristics of Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistors in Ballistic Mode

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.554 ◽

1994 ◽

Vol 33 (Part 1, No. 1B) ◽

pp. 554-557 ◽

Cited By ~ 10

Author(s):

Kenji Natori

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Current Voltage ◽

Current Voltage Characteristics

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